Diode-pumped 1.3-μm Nd:KGd(WO4)2 and Nd:YVO4 lasers passively Q-switched with PbS- and PbSe-doped glasses

A. M. Malyarevich; V. G. Savitski; N. N. Posnov; K. V. Yumashev; B. D. Sinclair; A. A. Lipovskii

doi:10.1117/12.517892

Diode-pumped 1.3-μm Nd:KGd(WO4)2 and Nd:YVO4 lasers passively Q-switched with PbS- and PbSe-doped glasses

A. M. Malyarevich^*, V. G. Savitski, N. N. Posnov, K. V. Yumashev, B. D. Sinclair, A. A. Lipovskii

^*Corresponding author for this work

Institute Of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Diode-pumped 1.3 μm Nd:YVO₄ and Nd:KGd(WO₄)₂ lasers passively Q-switched with the PbS- and PbSe-doped phosphate glasses were demonstrated. Pulses of 110 ns in duration for both types of materials and average output power of 23 mW from Nd:YVO₄ laser were obtained. Absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Numerical simulations of lasers operation were presented and analysis for more efficient use of PbS- and PbSe-doped glasses as passive shutters for diode-pumped lasers was made.

Original language	English
Pages (from-to)	60-65
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5137
DOIs	https://doi.org/10.1117/12.517892
Publication status	Published - 1 Dec 2002
Event	International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems - Moscow, Russia, Russian Federation Duration: 22 Jun 2002 → 28 Jun 2002

Keywords

diode-pumped lasers
IV-VI semiconductors
passive Q-switching
quantum dots
Q switched lasers
light absorption
semiconducting lead compounds

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title = "Diode-pumped 1.3-μm Nd:KGd(WO4)2 and Nd:YVO4 lasers passively Q-switched with PbS- and PbSe-doped glasses",

abstract = "Diode-pumped 1.3 μm Nd:YVO4 and Nd:KGd(WO4)2 lasers passively Q-switched with the PbS- and PbSe-doped phosphate glasses were demonstrated. Pulses of 110 ns in duration for both types of materials and average output power of 23 mW from Nd:YVO4 laser were obtained. Absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Numerical simulations of lasers operation were presented and analysis for more efficient use of PbS- and PbSe-doped glasses as passive shutters for diode-pumped lasers was made.",

keywords = "diode-pumped lasers, IV-VI semiconductors, passive Q-switching, quantum dots, Q switched lasers, light absorption, semiconducting lead compounds",

author = "Malyarevich, {A. M.} and Savitski, {V. G.} and Posnov, {N. N.} and Yumashev, {K. V.} and Sinclair, {B. D.} and Lipovskii, {A. A.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1117/12.517892",

language = "English",

volume = "5137",

pages = "60--65",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems ; Conference date: 22-06-2002 Through 28-06-2002",

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TY - JOUR

T1 - Diode-pumped 1.3-μm Nd:KGd(WO4)2 and Nd:YVO4 lasers passively Q-switched with PbS- and PbSe-doped glasses

AU - Malyarevich, A. M.

AU - Savitski, V. G.

AU - Posnov, N. N.

AU - Yumashev, K. V.

AU - Sinclair, B. D.

AU - Lipovskii, A. A.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Diode-pumped 1.3 μm Nd:YVO4 and Nd:KGd(WO4)2 lasers passively Q-switched with the PbS- and PbSe-doped phosphate glasses were demonstrated. Pulses of 110 ns in duration for both types of materials and average output power of 23 mW from Nd:YVO4 laser were obtained. Absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Numerical simulations of lasers operation were presented and analysis for more efficient use of PbS- and PbSe-doped glasses as passive shutters for diode-pumped lasers was made.

AB - Diode-pumped 1.3 μm Nd:YVO4 and Nd:KGd(WO4)2 lasers passively Q-switched with the PbS- and PbSe-doped phosphate glasses were demonstrated. Pulses of 110 ns in duration for both types of materials and average output power of 23 mW from Nd:YVO4 laser were obtained. Absorption recovery time of the PbS-doped glass was measured to be 27±4 ps. Numerical simulations of lasers operation were presented and analysis for more efficient use of PbS- and PbSe-doped glasses as passive shutters for diode-pumped lasers was made.

KW - diode-pumped lasers

KW - IV-VI semiconductors

KW - passive Q-switching

KW - quantum dots

KW - Q switched lasers

KW - light absorption

KW - semiconducting lead compounds

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U2 - 10.1117/12.517892

DO - 10.1117/12.517892

M3 - Conference article

AN - SCOPUS:1342289388

SN - 0277-786X

VL - 5137

SP - 60

EP - 65

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems

Y2 - 22 June 2002 through 28 June 2002

ER -

Diode-pumped 1.3-μm Nd:KGd(WO4)2 and Nd:YVO4 lasers passively Q-switched with PbS- and PbSe-doped glasses

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Keywords

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