Dielectronic recombination data for dynamic finite-density plasmas XV. The silicon isoelectronic sequence

Jagjit Kaur, T. W. Gorczyca, N. R. Badnell

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Abstract

Context. We aim to present a comprehensive theoretical investigation of dielectronic recombination (DR) of the silicon-like isoelectronic sequence and provide DR and radiative recombination (RR) data that can be used within a generalized collisional-radiative modelling framework.

Aims. Total and final-state level-resolved DR and RR rate coefficients for the ground and metastable initial levels of 16 ions between P+ and Zn16+ are determined.

Methods. We carried out multi-configurational Breit-Pauli DR calculations for silicon-like ions in the independent processes, isolated resonance, distorted wave approximation. Both Δnc = 0 and Δnc = 1 core excitations are included using LS and intermediate coupling schemes.

Results. Results are presented for a selected number of ions and compared to all other existing theoretical and experimental data. The total dielectronic and radiative recombination rate coefficients for the ground state are presented in tabulated form for easy implementation into spectral modelling codes. These data can also be accessed from the Atomic Data and Analysis Structure (ADAS) OPEN-ADAS database. This work is a part of an assembly of a dielectronic recombination database for the modelling of dynamic finite-density plasmas.
Original languageEnglish
Article numberA41
Number of pages9
JournalAstronomy and Astrophysics
Volume610
Early online date23 Feb 2018
DOIs
Publication statusE-pub ahead of print - 23 Feb 2018

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Keywords

  • atomic data
  • atomic processes
  • dielectronic recombination

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