Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa, Institution of Engineering and Technology

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Abstract

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
Original languageEnglish
Pages (from-to)935-937
Number of pages2
JournalElectronics Letters
Volume40
Issue number15
DOIs
Publication statusPublished - 22 Jul 2004

Keywords

  • diamond
  • elemental semiconductors
  • gallium arsenide
  • gallium compounds
  • indium compounds
  • laser mirrors
  • microchip lasers
  • surface emitting lasers
  • wide band gap semiconductors

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    Smith, S. A., Hopkins, J. M., Hastie, J. E., Burns, D., Calvez, S., Dawson, M. D., Jouhti, T., Kontinnen, J., Pessa, M., & Institution of Engineering and Technology (2004). Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40(15), 935-937. https://doi.org/10.1049/el:20045378