Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa, Institution of Engineering and Technology

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
LanguageEnglish
Pages935-937
Number of pages2
JournalElectronics Letters
Volume40
Issue number15
DOIs
Publication statusPublished - 22 Jul 2004

Fingerprint

Surface emitting lasers
Diamonds
Diodes
Mirrors
Single crystals

Keywords

  • diamond
  • elemental semiconductors
  • gallium arsenide
  • gallium compounds
  • indium compounds
  • laser mirrors
  • microchip lasers
  • surface emitting lasers
  • wide band gap semiconductors

Cite this

Smith, S. A., Hopkins, J. M., Hastie, J. E., Burns, D., Calvez, S., Dawson, M. D., ... Institution of Engineering and Technology (2004). Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40(15), 935-937. https://doi.org/10.1049/el:20045378
Smith, S.A. ; Hopkins, J.M. ; Hastie, J.E. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M. ; Institution of Engineering and Technology. / Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. In: Electronics Letters. 2004 ; Vol. 40, No. 15. pp. 935-937.
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abstract = "What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.",
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author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and D. Burns and S. Calvez and M.D. Dawson and T. Jouhti and J. Kontinnen and M. Pessa and {Institution of Engineering and Technology}",
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Smith, SA, Hopkins, JM, Hastie, JE, Burns, D, Calvez, S, Dawson, MD, Jouhti, T, Kontinnen, J, Pessa, M & Institution of Engineering and Technology 2004, 'Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm' Electronics Letters, vol. 40, no. 15, pp. 935-937. https://doi.org/10.1049/el:20045378

Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. / Smith, S.A.; Hopkins, J.M.; Hastie, J.E.; Burns, D.; Calvez, S.; Dawson, M.D.; Jouhti, T.; Kontinnen, J.; Pessa, M.; Institution of Engineering and Technology.

In: Electronics Letters, Vol. 40, No. 15, 22.07.2004, p. 935-937.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Burns, D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

AU - Institution of Engineering and Technology

PY - 2004/7/22

Y1 - 2004/7/22

N2 - What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

AB - What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

KW - diamond

KW - elemental semiconductors

KW - gallium arsenide

KW - gallium compounds

KW - indium compounds

KW - laser mirrors

KW - microchip lasers

KW - surface emitting lasers

KW - wide band gap semiconductors

UR - http://dx.doi.org/10.1049/el:20045378

U2 - 10.1049/el:20045378

DO - 10.1049/el:20045378

M3 - Article

VL - 40

SP - 935

EP - 937

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 15

ER -