Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

Enyuan Xie; Mark Stonehouse; Ricardo Ferreira; Jonathan J. D. McKendry; Johannes Herrnsdorf; Xiangyu He; Sujan Rajbhandari; Hyunchae Chun; Aravind V.N. Jalajakumari; Oscar Almer; Grahame Faulkner; Ian M. Watson; Erdan Gu; Robert Henderson; Dominic O'Brien; Martin D. Dawson

doi:10.1109/IPCon.2017.8116012

Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

Enyuan Xie, Mark Stonehouse, Ricardo Ferreira, Jonathan J. D. McKendry, Johannes Herrnsdorf, Xiangyu He, Sujan Rajbhandari, Hyunchae Chun, Aravind V.N. Jalajakumari, Oscar Almer, Grahame Faulkner, Ian M. Watson, Erdan Gu, Robert Henderson, Dominic O'Brien, Martin D. Dawson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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Abstract

We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.

Original language	English
Title of host publication	2017 IEEE Photonics Conference (IPC)
Place of Publication	Piscataway, N.J.
Publisher	IEEE
Number of pages	2
ISBN (Print)	978-1-5090-6579-0
DOIs	https://doi.org/10.1109/IPCon.2017.8116012
Publication status	Published - 23 Nov 2017

Keywords

GaN micro light emitting diodes
uLED arrays
PMOs

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10.1109/IPCon.2017.8116012

Xie-etal-IEEE-2017-Development-performance-and-application-of-novel-GaN-basedAccepted author manuscript, 236 KB

Data for 'Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes'
Xie, E. (Creator), Stonehouse, M. R. (Creator), Ferreira, R. (Creator), McKendry, J. (Creator), Herrnsdorf, J. (Creator), He, X. (Creator), Rajbhandari, S. (Creator), Chun, H. (Creator), Jalajakumari, A. V. N. (Creator), Almer, O. (Creator), Videv, S. (Creator), Faulkner, G. (Creator), Watson, I. (Creator), Gu, E. (Creator), Henderson, R. (Creator), O'Brien, D. (Creator), Haas, H. (Creator) & Dawson, M. (Creator), 7 Oct 2017
DOI: 10.15129/5dc8bacf-23f2-4e9a-afa3-b7dd4fb7806a
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Xie, E., Stonehouse, M., Ferreira, R., McKendry, J. J. D., Herrnsdorf, J., He, X., Rajbhandari, S., Chun, H., Jalajakumari, A. V. N., Almer, O., Faulkner, G., Watson, I. M., Gu, E., Henderson, R., O'Brien, D., & Dawson, M. D. (2017). Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes. In 2017 IEEE Photonics Conference (IPC) IEEE. https://doi.org/10.1109/IPCon.2017.8116012

@inproceedings{c6ad069f8e28443f95e8ffb60382baf9,

title = "Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes",

abstract = "We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.",

keywords = "GaN micro light emitting diodes, uLED arrays, PMOs",

author = "Enyuan Xie and Mark Stonehouse and Ricardo Ferreira and McKendry, {Jonathan J. D.} and Johannes Herrnsdorf and Xiangyu He and Sujan Rajbhandari and Hyunchae Chun and Jalajakumari, {Aravind V.N.} and Oscar Almer and Grahame Faulkner and Watson, {Ian M.} and Erdan Gu and Robert Henderson and Dominic O'Brien and Dawson, {Martin D.}",

note = "{\textcopyright} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

year = "2017",

month = nov,

day = "23",

doi = "10.1109/IPCon.2017.8116012",

language = "English",

isbn = "978-1-5090-6579-0",

booktitle = "2017 IEEE Photonics Conference (IPC)",

publisher = "IEEE",

}

Xie, E, Stonehouse, M, Ferreira, R, McKendry, JJD , Herrnsdorf, J, He, X, Rajbhandari, S, Chun, H, Jalajakumari, AVN, Almer, O, Faulkner, G, Watson, IM, Gu, E, Henderson, R, O'Brien, D & Dawson, MD 2017, Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes. in 2017 IEEE Photonics Conference (IPC). IEEE, Piscataway, N.J. https://doi.org/10.1109/IPCon.2017.8116012

TY - GEN

T1 - Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

AU - Xie, Enyuan

AU - Stonehouse, Mark

AU - Ferreira, Ricardo

AU - McKendry, Jonathan J. D.

AU - Herrnsdorf, Johannes

AU - He, Xiangyu

AU - Rajbhandari, Sujan

AU - Chun, Hyunchae

AU - Jalajakumari, Aravind V.N.

AU - Almer, Oscar

AU - Faulkner, Grahame

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Henderson, Robert

AU - O'Brien, Dominic

AU - Dawson, Martin D.

N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.

AB - We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.

KW - GaN micro light emitting diodes

KW - uLED arrays

KW - PMOs

U2 - 10.1109/IPCon.2017.8116012

DO - 10.1109/IPCon.2017.8116012

M3 - Conference contribution book

SN - 978-1-5090-6579-0

BT - 2017 IEEE Photonics Conference (IPC)

PB - IEEE

CY - Piscataway, N.J.

ER -

Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

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