Development of high average power picosecond laser systems

D. Burns, G.J. Valentine, E.A.J.M. Bente, A.I. Ferguson, Alexis V. Kudryashov (Editor)

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.
Original languageEnglish
Title of host publicationLaser resonators and beam control V: Proceedings SPIE 2002
Pages129
Volume4629
DOIs
Publication statusPublished - 13 Apr 2003

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Keywords

  • laser development
  • high average power
  • picosecond laser systems
  • laser systems

Cite this

Burns, D., Valentine, G. J., Bente, E. A. J. M., Ferguson, A. I., & Kudryashov, A. V. (Ed.) (2003). Development of high average power picosecond laser systems. In Laser resonators and beam control V: Proceedings SPIE 2002 (Vol. 4629, pp. 129) https://doi.org/10.1117/12.469492