The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.
|Title of host publication||Laser resonators and beam control V: Proceedings SPIE 2002|
|Publication status||Published - 13 Apr 2003|
- laser development
- high average power
- picosecond laser systems
- laser systems
Burns, D., Valentine, G. J., Bente, E. A. J. M., Ferguson, A. I., & Kudryashov, A. V. (Ed.) (2003). Development of high average power picosecond laser systems. In Laser resonators and beam control V: Proceedings SPIE 2002 (Vol. 4629, pp. 129) https://doi.org/10.1117/12.469492