Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes

K. P. O'Donnell; C. Trager-Cowan; F. Sweeney; P. I. Kutzenov; V. A. Jitov; L. Yu Zakharov; G. G. Yakushcheva; V. I. Kozlovsky; V. Yu Bondarev; D. A. Sannikov

doi:10.1002/pssa.200304092

Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes

K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, P. I. Kutzenov, V. A. Jitov, L. Yu Zakharov, G. G. Yakushcheva, V. I. Kozlovsky, V. Yu Bondarev, D. A. Sannikov

Physics

Research output: Contribution to journal › Article

Abstract

This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.

Original language	English
Pages (from-to)	673-677
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	4
DOIs	https://doi.org/10.1002/pssa.200304092
Publication status	Published - 10 Mar 2004

Keywords

laser cathode ray tube devices
II-VI semiconductors
semiconductor laser

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O'Donnell, K. P., Trager-Cowan, C., Sweeney, F., Kutzenov, P. I., Jitov, V. A., Zakharov, L. Y., ... Sannikov, D. A. (2004). Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes. Physica Status Solidi (A) Applied Research, 201(4), 673-677. https://doi.org/10.1002/pssa.200304092

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title = "Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes",

abstract = "This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.",

keywords = "laser cathode ray tube devices, II-VI semiconductors, semiconductor laser",

author = "O'Donnell, {K. P.} and C. Trager-Cowan and F. Sweeney and Kutzenov, {P. I.} and Jitov, {V. A.} and Zakharov, {L. Yu} and Yakushcheva, {G. G.} and Kozlovsky, {V. I.} and Bondarev, {V. Yu} and Sannikov, {D. A.}",

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Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes. / O'Donnell, K. P.; Trager-Cowan, C.; Sweeney, F.; Kutzenov, P. I.; Jitov, V. A.; Zakharov, L. Yu; Yakushcheva, G. G.; Kozlovsky, V. I.; Bondarev, V. Yu; Sannikov, D. A.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 4, 10.03.2004, p. 673-677.

Research output: Contribution to journal › Article

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T1 - Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

AU - Sweeney, F.

AU - Kutzenov, P. I.

AU - Jitov, V. A.

AU - Zakharov, L. Yu

AU - Yakushcheva, G. G.

AU - Kozlovsky, V. I.

AU - Bondarev, V. Yu

AU - Sannikov, D. A.

PY - 2004/3/10

Y1 - 2004/3/10

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AB - This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.

KW - laser cathode ray tube devices

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