Abstract
This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.
| Language | English |
|---|---|
| Pages | 673-677 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 201 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 10 Mar 2004 |
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Keywords
- laser cathode ray tube devices
- II-VI semiconductors
- semiconductor laser
Cite this
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Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes. / O'Donnell, K. P.; Trager-Cowan, C.; Sweeney, F.; Kutzenov, P. I.; Jitov, V. A.; Zakharov, L. Yu; Yakushcheva, G. G.; Kozlovsky, V. I.; Bondarev, V. Yu; Sannikov, D. A.
In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 4, 10.03.2004, p. 673-677.Research output: Contribution to journal › Article
TY - JOUR
T1 - Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
AU - O'Donnell, K. P.
AU - Trager-Cowan, C.
AU - Sweeney, F.
AU - Kutzenov, P. I.
AU - Jitov, V. A.
AU - Zakharov, L. Yu
AU - Yakushcheva, G. G.
AU - Kozlovsky, V. I.
AU - Bondarev, V. Yu
AU - Sannikov, D. A.
PY - 2004/3/10
Y1 - 2004/3/10
N2 - This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.
AB - This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.
KW - laser cathode ray tube devices
KW - II-VI semiconductors
KW - semiconductor laser
UR - http://www.scopus.com/inward/record.url?scp=11144356671&partnerID=8YFLogxK
U2 - 10.1002/pssa.200304092
DO - 10.1002/pssa.200304092
M3 - Article
VL - 201
SP - 673
EP - 677
JO - Physica Status Solidi A: Applications and Materials Science
T2 - Physica Status Solidi A: Applications and Materials Science
JF - Physica Status Solidi A: Applications and Materials Science
SN - 0031-8965
IS - 4
ER -