Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes

K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, P. I. Kutzenov, V. A. Jitov, L. Yu Zakharov, G. G. Yakushcheva, V. I. Kozlovsky, V. Yu Bondarev, D. A. Sannikov

Research output: Contribution to journalArticle

Abstract

This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.

Original languageEnglish
Pages (from-to)673-677
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number4
DOIs
Publication statusPublished - 10 Mar 2004

Keywords

  • laser cathode ray tube devices
  • II-VI semiconductors
  • semiconductor laser

Fingerprint Dive into the research topics of 'Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes'. Together they form a unique fingerprint.

  • Cite this