This report summarises recent progress towards the realisation of Laser Cathode Ray Tube (LCRT) devices on the basis of II-VI semiconductors. Although such devices were demonstrated over 30 years ago, using bulk crystalline materials as the active media, practical lasers that operate at room temperature for extended periods of time are not yet readily available. We aim to overcome this roadblock by reducing the threshold power densities of working lasers. By embedding heterostructures, grown using metalorganic vapour phase epitaxy (MOVPE), within all-dielectric microcavities, the necessary threshold reductions can be made. The construction and testing of an exemplar device, based upon CdSSe/CdS (hex) multiple quantum wells, is described.
- laser cathode ray tube devices
- II-VI semiconductors
- semiconductor laser