In this paper we describe the use of electron backscattered diffraction (EBSD) for the characterisation of nitride thin films, and report its use in the study of the spatial variation of strain across an epitaxially laterally overgrown GaN (ELOG) thin film. We also discuss the combination of luminescence and EBSD measurements to enable luminescence properties of samples to be directly correlated with their crystallographic properties. We compare photoluminescence spectra and EBSD measurements from a set of GaN thin films grown on off-axis sapphire substrates, revealing the tilt of a GaN thin film grown on a 10° off-axis sapphire substrate to be responsible for the observation of luminescence defect bands in this film. We finally report on the use of EBSD to identify zinc blende regions in a predominantly wurtzite MBE film, with cathodoluminescence used to obtain correlated luminescence spectra.
- electron backscattered diffraction
Trager-Cowan, C., Sweeney, F., Wilkinson, A. J., Watson, I. M., Middleton, P. G., O'Donnell, K. P., ... Hommel, D. (2002). Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence. Physica Status Solidi C, 0(1), 532-536. https://doi.org/10.1002/pssc.200390107