Determination of the Mn concentration in GaMnAs

LX Zhao, RP Campion, PF Fewster, RW Martin, BY Ber, AP Kovarsky, CR Staddon, KY Wang, KW Edmonds, CT Foxon, BL Gallagher

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Abstract

Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.
Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalSemiconductor Science and Technology
Volume20
Issue number5
DOIs
Publication statusPublished - 1 May 2005

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Keywords

  • GaMnAs
  • semiconductors
  • x-ray diffraction

Cite this

Zhao, LX., Campion, RP., Fewster, PF., Martin, RW., Ber, BY., Kovarsky, AP., ... Gallagher, BL. (2005). Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20(5), 369-373. https://doi.org/10.1088/0268-1242/20/5/008