Determination of the Mn concentration in GaMnAs

LX Zhao; RP Campion; PF Fewster; RW Martin; BY Ber; AP Kovarsky; CR Staddon; KY Wang; KW Edmonds; CT Foxon; BL Gallagher

doi:10.1088/0268-1242/20/5/008

Determination of the Mn concentration in GaMnAs

LX Zhao, RP Campion, PF Fewster, RW Martin, BY Ber, AP Kovarsky, CR Staddon, KY Wang, KW Edmonds, CT Foxon, BL Gallagher

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.

Original language	English
Pages (from-to)	369-373
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	20
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/20/5/008
Publication status	Published - 1 May 2005

Keywords

GaMnAs
semiconductors
x-ray diffraction

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10.1088/0268-1242/20/5/008

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title = "Determination of the Mn concentration in GaMnAs",

abstract = "Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.",

keywords = "GaMnAs, semiconductors, x-ray diffraction",

author = "LX Zhao and RP Campion and PF Fewster and RW Martin and BY Ber and AP Kovarsky and CR Staddon and KY Wang and KW Edmonds and CT Foxon and BL Gallagher",

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doi = "10.1088/0268-1242/20/5/008",

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T1 - Determination of the Mn concentration in GaMnAs

AU - Zhao, LX

AU - Campion, RP

AU - Fewster, PF

AU - Martin, RW

AU - Ber, BY

AU - Kovarsky, AP

AU - Staddon, CR

AU - Wang, KY

AU - Edmonds, KW

AU - Foxon, CT

AU - Gallagher, BL

PY - 2005/5/1

Y1 - 2005/5/1

N2 - Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.

AB - Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.

KW - GaMnAs

KW - semiconductors

KW - x-ray diffraction

U2 - 10.1088/0268-1242/20/5/008

DO - 10.1088/0268-1242/20/5/008

M3 - Article

SN - 0268-1242

VL - 20

SP - 369

EP - 373

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

ER -

Determination of the Mn concentration in GaMnAs

Abstract

Keywords

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