Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

M. D. Smith, E. Taylor , T. C. Sadler, V. Z. Zubialevich, K. Lorenz, H. N. Li, J. O'Connell, E. Alves, J. D. Holmes, R. W. Martin, P. J. Parbrook

Research output: Contribution to journalArticle

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Abstract

We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24% to similar to 12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.
LanguageEnglish
Pages5787-5792
Number of pages7
JournalJournal of Materials Chemistry. C
Volume2
Issue number29
Early online date16 Apr 2014
DOIs
Publication statusPublished - 2014

Fingerprint

Gallium
Epilayers
Metallorganic chemical vapor deposition
High electron mobility transistors
Secondary ion mass spectrometry
Optoelectronic devices
metalorganic chemical vapor deposition
X ray photoelectron spectroscopy
Flow rate
X ray diffraction
reactors
optoelectronic devices
high electron mobility transistors
sublattices
secondary ion mass spectrometry
gallium
x rays
flow velocity
photoelectron spectroscopy
diffraction

Keywords

  • auto-incorporation
  • epilayers
  • gallium
  • InAlN
  • GaN

Cite this

Smith, M. D., Taylor , E., Sadler, T. C., Zubialevich, V. Z., Lorenz, K., Li, H. N., ... Parbrook, P. J. (2014). Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry. C , 2(29), 5787-5792. https://doi.org/10.1039/c4tc00480a
Smith, M. D. ; Taylor , E. ; Sadler, T. C. ; Zubialevich, V. Z. ; Lorenz, K. ; Li, H. N. ; O'Connell, J. ; Alves, E. ; Holmes, J. D. ; Martin, R. W. ; Parbrook, P. J. / Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. In: Journal of Materials Chemistry. C . 2014 ; Vol. 2, No. 29. pp. 5787-5792.
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abstract = "We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24{\%} to similar to 12{\%} when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.",
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Smith, MD, Taylor , E, Sadler, TC, Zubialevich, VZ, Lorenz, K, Li, HN, O'Connell, J, Alves, E, Holmes, JD, Martin, RW & Parbrook, PJ 2014, 'Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD' Journal of Materials Chemistry. C , vol. 2, no. 29, pp. 5787-5792. https://doi.org/10.1039/c4tc00480a

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. / Smith, M. D.; Taylor , E.; Sadler, T. C.; Zubialevich, V. Z.; Lorenz, K.; Li, H. N.; O'Connell, J.; Alves, E.; Holmes, J. D.; Martin, R. W.; Parbrook, P. J.

In: Journal of Materials Chemistry. C , Vol. 2, No. 29, 2014, p. 5787-5792.

Research output: Contribution to journalArticle

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T1 - Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

AU - Smith, M. D.

AU - Taylor , E.

AU - Sadler, T. C.

AU - Zubialevich, V. Z.

AU - Lorenz, K.

AU - Li, H. N.

AU - O'Connell, J.

AU - Alves, E.

AU - Holmes, J. D.

AU - Martin, R. W.

AU - Parbrook, P. J.

PY - 2014

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AB - We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24% to similar to 12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.

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