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We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24% to similar to 12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.
1/04/11 → 31/03/15
Smith, M. D., Taylor , E., Sadler, T. C., Zubialevich, V. Z., Lorenz, K., Li, H. N., O'Connell, J., Alves, E., Holmes, J. D., Martin, R. W., & Parbrook, P. J. (2014). Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry. C , 2(29), 5787-5792. https://doi.org/10.1039/c4tc00480a