Detection of variable tunneling rates in silicon quantum dots

A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Reliable detection of single electron tunneling in quantum dots (QDs) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. © 2011 American Institute of Physics.

Original languageEnglish
Article number133506
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
Publication statusPublished - 28 Mar 2011

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Keywords

  • semiconductor quantum dots
  • data processing
  • detectors
  • electron tunneling

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