Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Y. Chen, J. Schmidt, L. Siller, J.C. Barnard, R.E. Palmer, T.M. Burke, M.P. Smith, S.J. Brown, D.A. Ritchie, M. Pepper

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We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

Original languageEnglish
Article number3034
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 22 May 2000


  • regrowth
  • quality
  • gallium arsenide
  • electron stimulated desorption
  • organic compounds

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