Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Y. Chen; J. Schmidt; L. Siller; J.C.  Barnard; R.E. Palmer; T.M.  Burke; M.P.  Smith; S.J.  Brown; D.A.  Ritchie; M. Pepper

doi:10.1063/1.126570

Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Y. Chen, J. Schmidt, L. Siller, J.C. Barnard, R.E. Palmer, T.M. Burke, M.P. Smith, S.J. Brown, D.A. Ritchie, M. Pepper

Physics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

Original language	English
Article number	3034
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	21
DOIs	https://doi.org/10.1063/1.126570
Publication status	Published - 22 May 2000

Keywords

regrowth
quality
gallium arsenide
electron stimulated desorption
organic compounds

Access to Document

10.1063/1.126570

Cite this

@article{c7ae7b76eb7c49e4adea462bd0cf4142,

title = "Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient",

abstract = "We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].",

keywords = "regrowth, quality, gallium arsenide, electron stimulated desorption, organic compounds",

author = "Y. Chen and J. Schmidt and L. Siller and J.C. Barnard and R.E. Palmer and T.M. Burke and M.P. Smith and S.J. Brown and D.A. Ritchie and M. Pepper",

year = "2000",

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doi = "10.1063/1.126570",

language = "English",

volume = "76",

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Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. / Chen, Y.; Schmidt, J.; Siller, L.; Barnard, J.C. ; Palmer, R.E.; Burke, T.M. ; Smith, M.P. ; Brown, S.J. ; Ritchie, D.A. ; Pepper, M.

In: Applied Physics Letters, Vol. 76, No. 21, 3034, 22.05.2000.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

AU - Chen, Y.

AU - Schmidt, J.

AU - Siller, L.

AU - Barnard, J.C.

AU - Palmer, R.E.

AU - Burke, T.M.

AU - Smith, M.P.

AU - Brown, S.J.

AU - Ritchie, D.A.

AU - Pepper, M.

PY - 2000/5/22

Y1 - 2000/5/22

N2 - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

AB - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

KW - regrowth

KW - quality

KW - gallium arsenide

KW - electron stimulated desorption

KW - organic compounds

U2 - 10.1063/1.126570

DO - 10.1063/1.126570

M3 - Article

VL - 76

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 3034

ER -