Abstract
We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].
Original language | English |
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Article number | 3034 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 21 |
DOIs | |
Publication status | Published - 22 May 2000 |
Keywords
- regrowth
- quality
- gallium arsenide
- electron stimulated desorption
- organic compounds