Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Y. Chen, J. Schmidt, L. Siller, J.C. Barnard, R.E. Palmer, T.M. Burke, M.P. Smith, S.J. Brown, D.A. Ritchie, M. Pepper

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

LanguageEnglish
Article number3034
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
Publication statusPublished - 22 May 2000

Fingerprint

electron irradiation
desorption
hydrogen
electron flux
carbon
energy
hydrogen atoms
mass spectroscopy
hydrocarbons
energy dissipation
spectrometers
electron energy
high resolution
room temperature
ions
electrons
temperature

Keywords

  • regrowth
  • quality
  • gallium arsenide
  • electron stimulated desorption
  • organic compounds

Cite this

Chen, Y. ; Schmidt, J. ; Siller, L. ; Barnard, J.C. ; Palmer, R.E. ; Burke, T.M. ; Smith, M.P. ; Brown, S.J. ; Ritchie, D.A. ; Pepper, M. / Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. In: Applied Physics Letters. 2000 ; Vol. 76, No. 21.
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Chen, Y, Schmidt, J, Siller, L, Barnard, JC, Palmer, RE, Burke, TM, Smith, MP, Brown, SJ, Ritchie, DA & Pepper, M 2000, 'Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient' Applied Physics Letters, vol. 76, no. 21, 3034. https://doi.org/10.1063/1.126570

Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. / Chen, Y.; Schmidt, J.; Siller, L.; Barnard, J.C. ; Palmer, R.E.; Burke, T.M. ; Smith, M.P. ; Brown, S.J. ; Ritchie, D.A. ; Pepper, M.

In: Applied Physics Letters, Vol. 76, No. 21, 3034, 22.05.2000.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

AU - Chen, Y.

AU - Schmidt, J.

AU - Siller, L.

AU - Barnard, J.C.

AU - Palmer, R.E.

AU - Burke, T.M.

AU - Smith, M.P.

AU - Brown, S.J.

AU - Ritchie, D.A.

AU - Pepper, M.

PY - 2000/5/22

Y1 - 2000/5/22

N2 - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

AB - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

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KW - quality

KW - gallium arsenide

KW - electron stimulated desorption

KW - organic compounds

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DO - 10.1063/1.126570

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