Abstract
We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].
| Language | English |
|---|---|
| Article number | 3034 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 22 May 2000 |
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Keywords
- regrowth
- quality
- gallium arsenide
- electron stimulated desorption
- organic compounds
Cite this
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Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. / Chen, Y.; Schmidt, J.; Siller, L.; Barnard, J.C. ; Palmer, R.E.; Burke, T.M. ; Smith, M.P. ; Brown, S.J. ; Ritchie, D.A. ; Pepper, M.
In: Applied Physics Letters, Vol. 76, No. 21, 3034, 22.05.2000.Research output: Contribution to journal › Article
TY - JOUR
T1 - Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient
AU - Chen, Y.
AU - Schmidt, J.
AU - Siller, L.
AU - Barnard, J.C.
AU - Palmer, R.E.
AU - Burke, T.M.
AU - Smith, M.P.
AU - Brown, S.J.
AU - Ritchie, D.A.
AU - Pepper, M.
PY - 2000/5/22
Y1 - 2000/5/22
N2 - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].
AB - We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].
KW - regrowth
KW - quality
KW - gallium arsenide
KW - electron stimulated desorption
KW - organic compounds
U2 - 10.1063/1.126570
DO - 10.1063/1.126570
M3 - Article
VL - 76
JO - Applied Physics Letters
T2 - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 3034
ER -