Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

Enyuan Xie, Mark Stonehouse, Ricardo Ferreira, Jonathan J. D. McKendry, Johannes Herrnsdorf, Xiangyu He, Sujan Rajbhandari, Hyunchae Chun, Aravind V.N. Jalajakumari, Oscar Almer, Grahame Faulkner, Ian M. Watson, Erdan Gu, Robert Henderson, Dominic O'Brien, Martin D. Dawson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We demonstrate the development, performance and application of a GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable nelectrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single LED element with 24 μm diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working μLED elements per array, and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mbps without bit error is achieved for single and multiple-μLED-element operations, under an on-off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the μLED elements can transmit discrete multi-level signals.
LanguageEnglish
Article number7907811
Number of pages11
JournalIEEE Photonics Journal
Volume9
Issue number6
Early online date30 Nov 2017
DOIs
Publication statusPublished - 31 Dec 2017

Fingerprint

Light emitting diodes
light emitting diodes
Fabrication
Electrodes
fabrication
electrodes
Modulation
n-type semiconductors
Light modulation
Metals
metal oxide semiconductors
Data communication systems
sawtooth waveforms
Anodes
Transistors
Cathodes
Current density
Bandwidth
modulation
keying

Keywords

  • GaN
  • micro-light emitting diode array
  • visible light communication

Cite this

Xie, Enyuan ; Stonehouse, Mark ; Ferreira, Ricardo ; McKendry, Jonathan J. D. ; Herrnsdorf, Johannes ; He, Xiangyu ; Rajbhandari, Sujan ; Chun, Hyunchae ; Jalajakumari, Aravind V.N. ; Almer, Oscar ; Faulkner, Grahame ; Watson, Ian M. ; Gu, Erdan ; Henderson, Robert ; O'Brien, Dominic ; Dawson, Martin D. / Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. In: IEEE Photonics Journal. 2017 ; Vol. 9, No. 6.
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abstract = "We demonstrate the development, performance and application of a GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable nelectrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single LED element with 24 μm diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working μLED elements per array, and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mbps without bit error is achieved for single and multiple-μLED-element operations, under an on-off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the μLED elements can transmit discrete multi-level signals.",
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Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. / Xie, Enyuan; Stonehouse, Mark; Ferreira, Ricardo; McKendry, Jonathan J. D.; Herrnsdorf, Johannes; He, Xiangyu; Rajbhandari, Sujan; Chun, Hyunchae; Jalajakumari, Aravind V.N.; Almer, Oscar; Faulkner, Grahame; Watson, Ian M.; Gu, Erdan; Henderson, Robert; O'Brien, Dominic; Dawson, Martin D.

In: IEEE Photonics Journal, Vol. 9, No. 6, 7907811, 31.12.2017.

Research output: Contribution to journalArticle

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T1 - Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

AU - Xie, Enyuan

AU - Stonehouse, Mark

AU - Ferreira, Ricardo

AU - McKendry, Jonathan J. D.

AU - Herrnsdorf, Johannes

AU - He, Xiangyu

AU - Rajbhandari, Sujan

AU - Chun, Hyunchae

AU - Jalajakumari, Aravind V.N.

AU - Almer, Oscar

AU - Faulkner, Grahame

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Henderson, Robert

AU - O'Brien, Dominic

AU - Dawson, Martin D.

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N2 - We demonstrate the development, performance and application of a GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable nelectrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single LED element with 24 μm diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working μLED elements per array, and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mbps without bit error is achieved for single and multiple-μLED-element operations, under an on-off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the μLED elements can transmit discrete multi-level signals.

AB - We demonstrate the development, performance and application of a GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable nelectrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single LED element with 24 μm diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working μLED elements per array, and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mbps without bit error is achieved for single and multiple-μLED-element operations, under an on-off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the μLED elements can transmit discrete multi-level signals.

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KW - visible light communication

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JO - IEEE Photonics Journal

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JF - IEEE Photonics Journal

SN - 1943-0655

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