Design and Testing of Isolated Gate Driver for Cryogenic Environments

Abdelrahman Elwakeel, Neville McNeill, Rafael Peña Alzola, Ravi Kiran Surapaneni, Gowtham Galla, Ludovic Ybanez, Min Zhang, Weijia Yuan

Research output: Contribution to journalArticlepeer-review

Abstract

Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article.
Original languageEnglish
Article number 3800704
Pages (from-to)1-4
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume34
Issue number3
Early online date22 Jan 2024
DOIs
Publication statusPublished - 1 May 2024

Keywords

  • Cryogenic electronics
  • gate driver
  • IGBT
  • MOSFET
  • propulsion

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