Design and simulation of next-generation high-power, high-brightness laser diodes

Jun Lim, Slawomir Sujecki, Lei Lang, Zhichao Zhang, David Paboeuf, Gilles Pauliat, Gaëlle Lucas-Leclin, Patrick Georges, Roderick C. I. MacKenzie, Philip Bream, Stephen Bull, Karl-Heinz Hasler, Bernd Sumpf, Hans Wenzel, Götz Erbert, Birgitte Thestrup, Paul Michael Petersen, Nicolas Michel, Michel Krakowski, Eric Larkins

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal- and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broad-area laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.
LanguageEnglish
Pages993-1008
Number of pages16
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume15
Issue number3
DOIs
Publication statusPublished - Jun 2009

Fingerprint

Semiconductor lasers
Luminance
brightness
semiconductor lasers
simulation
Modulation
modulation
Beam quality
Lasers
Power quality
locking
lasers
discrimination
Resonators
emerging
purity
resonators
Feedback
Wavelength
requirements

Keywords

  • laser beams
  • high powered lasers
  • beam parameter
  • coherent beam
  • spectral purity

Cite this

Lim, Jun ; Sujecki, Slawomir ; Lang, Lei ; Zhang, Zhichao ; Paboeuf, David ; Pauliat, Gilles ; Lucas-Leclin, Gaëlle ; Georges, Patrick ; MacKenzie, Roderick C. I. ; Bream, Philip ; Bull, Stephen ; Hasler, Karl-Heinz ; Sumpf, Bernd ; Wenzel, Hans ; Erbert, Götz ; Thestrup, Birgitte ; Petersen, Paul Michael ; Michel, Nicolas ; Krakowski, Michel ; Larkins, Eric. / Design and simulation of next-generation high-power, high-brightness laser diodes. In: IEEE Journal of Selected Topics in Quantum Electronics. 2009 ; Vol. 15, No. 3. pp. 993-1008.
@article{c1ec24ad431947aca8d1f2de180daba3,
title = "Design and simulation of next-generation high-power, high-brightness laser diodes",
abstract = "High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal- and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broad-area laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.",
keywords = "laser beams, high powered lasers, beam parameter, coherent beam, spectral purity",
author = "Jun Lim and Slawomir Sujecki and Lei Lang and Zhichao Zhang and David Paboeuf and Gilles Pauliat and Ga{\"e}lle Lucas-Leclin and Patrick Georges and MacKenzie, {Roderick C. I.} and Philip Bream and Stephen Bull and Karl-Heinz Hasler and Bernd Sumpf and Hans Wenzel and G{\"o}tz Erbert and Birgitte Thestrup and Petersen, {Paul Michael} and Nicolas Michel and Michel Krakowski and Eric Larkins",
year = "2009",
month = "6",
doi = "10.1109/JSTQE.2008.2011286",
language = "English",
volume = "15",
pages = "993--1008",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
number = "3",

}

Lim, J, Sujecki, S, Lang, L, Zhang, Z, Paboeuf, D, Pauliat, G, Lucas-Leclin, G, Georges, P, MacKenzie, RCI, Bream, P, Bull, S, Hasler, K-H, Sumpf, B, Wenzel, H, Erbert, G, Thestrup, B, Petersen, PM, Michel, N, Krakowski, M & Larkins, E 2009, 'Design and simulation of next-generation high-power, high-brightness laser diodes' IEEE Journal of Selected Topics in Quantum Electronics, vol. 15, no. 3, pp. 993-1008. https://doi.org/10.1109/JSTQE.2008.2011286

Design and simulation of next-generation high-power, high-brightness laser diodes. / Lim, Jun; Sujecki, Slawomir; Lang, Lei; Zhang, Zhichao; Paboeuf, David; Pauliat, Gilles; Lucas-Leclin, Gaëlle; Georges, Patrick; MacKenzie, Roderick C. I.; Bream, Philip; Bull, Stephen; Hasler, Karl-Heinz; Sumpf, Bernd; Wenzel, Hans; Erbert, Götz; Thestrup, Birgitte; Petersen, Paul Michael; Michel, Nicolas; Krakowski, Michel; Larkins, Eric.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, No. 3, 06.2009, p. 993-1008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Design and simulation of next-generation high-power, high-brightness laser diodes

AU - Lim, Jun

AU - Sujecki, Slawomir

AU - Lang, Lei

AU - Zhang, Zhichao

AU - Paboeuf, David

AU - Pauliat, Gilles

AU - Lucas-Leclin, Gaëlle

AU - Georges, Patrick

AU - MacKenzie, Roderick C. I.

AU - Bream, Philip

AU - Bull, Stephen

AU - Hasler, Karl-Heinz

AU - Sumpf, Bernd

AU - Wenzel, Hans

AU - Erbert, Götz

AU - Thestrup, Birgitte

AU - Petersen, Paul Michael

AU - Michel, Nicolas

AU - Krakowski, Michel

AU - Larkins, Eric

PY - 2009/6

Y1 - 2009/6

N2 - High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal- and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broad-area laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

AB - High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal- and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broad-area laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

KW - laser beams

KW - high powered lasers

KW - beam parameter

KW - coherent beam

KW - spectral purity

UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=4798207

U2 - 10.1109/JSTQE.2008.2011286

DO - 10.1109/JSTQE.2008.2011286

M3 - Article

VL - 15

SP - 993

EP - 1008

JO - IEEE Journal of Selected Topics in Quantum Electronics

T2 - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 3

ER -