Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.
LanguageEnglish
Title of host publicationPIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium
Pages925-928
Number of pages3
Publication statusPublished - 2008

Publication series

NameProgress in Electromagnetics Research Symposium
PublisherThe Electromagnetics Academy

Fingerprint

foundries
inductors
microelectromechanical systems
radio frequencies
silicon
Q factors
micromachining
inductance
embedding
resonant frequencies
frequency ranges
nickel
simulation

Keywords

  • radio frequency inductors
  • radio frequency
  • MEMS

Cite this

Li, L., & Uttamchandani, D. G. (2008). Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. In PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium (pp. 925-928). (Progress in Electromagnetics Research Symposium).
Li, L. ; Uttamchandani, D.G. / Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium. 2008. pp. 925-928 (Progress in Electromagnetics Research Symposium).
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abstract = "A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.",
keywords = "radio frequency inductors, radio frequency, MEMS",
author = "L. Li and D.G. Uttamchandani",
year = "2008",
language = "English",
isbn = "978-1-934142-00-4",
series = "Progress in Electromagnetics Research Symposium",
publisher = "The Electromagnetics Academy",
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Li, L & Uttamchandani, DG 2008, Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. in PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium. Progress in Electromagnetics Research Symposium, pp. 925-928.

Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. / Li, L.; Uttamchandani, D.G.

PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium. 2008. p. 925-928 (Progress in Electromagnetics Research Symposium).

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process

AU - Li, L.

AU - Uttamchandani, D.G.

PY - 2008

Y1 - 2008

N2 - A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.

AB - A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.

KW - radio frequency inductors

KW - radio frequency

KW - MEMS

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M3 - Chapter

SN - 978-1-934142-00-4

T3 - Progress in Electromagnetics Research Symposium

SP - 925

EP - 928

BT - PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium

ER -

Li L, Uttamchandani DG. Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. In PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium. 2008. p. 925-928. (Progress in Electromagnetics Research Symposium).