Abstract
| Original language | English |
|---|---|
| Title of host publication | PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium |
| Pages | 925-928 |
| Number of pages | 3 |
| Publication status | Published - 2008 |
Publication series
| Name | Progress in Electromagnetics Research Symposium |
|---|---|
| Publisher | The Electromagnetics Academy |
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Keywords
- radio frequency inductors
- radio frequency
- MEMS
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Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process. / Li, L.; Uttamchandani, D.G.
PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium. 2008. p. 925-928 (Progress in Electromagnetics Research Symposium).Research output: Chapter in Book/Report/Conference proceeding › Chapter
TY - CHAP
T1 - Design and characterization of a radio frequency MEMS inductor using silicon MEMS foundry process
AU - Li, L.
AU - Uttamchandani, D.G.
PY - 2008
Y1 - 2008
N2 - A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.
AB - A successful design of RF inductor based on a silicon MEMS foundry process is presented. The suspended inductor has been realized in electroplated thick nickel with front side bulk micromachining of the substrate. The overall size of the inductor is about 1 mm x 1 mm. The inductors have been experimentally characterized and inductances around 2 nH in the frequency range of 200 MHz-7 GHz have been measured with self resonant frequency of 9.8 GHz. The peak measured value of the Q factor is 12 at a frequency of 4 GHz. After de-embedding, the Q factor reaches 13 at a frequency of 4.8 GHz. Simulation based on a parameter extraction method has been carried out for the inductor. There is a good agreement between simulated and experimental results.
KW - radio frequency inductors
KW - radio frequency
KW - MEMS
UR - http://piers.mit.edu/piersproceedings/piers2k8HangzhouProc.php?searchname=Uttamchandani
M3 - Chapter
SN - 978-1-934142-00-4
T3 - Progress in Electromagnetics Research Symposium
SP - 925
EP - 928
BT - PIERS 2008 Hangzhou: Progress in Electromagnetics Research Symposium
ER -