Depth‐resolved cathodoluminescence of ZnSe epilayers

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Abstract

In This paper we illustrate the use of an electron beam of variable energy to get depth information on the strain, impurity and defect distribution in ZnSe epilayers. From the increase in splitting of the free light and heavy hole exciton bands with increasing electron beam energy we deduce that the strain increases with depth. From the increase in the luminescence intensity of the impurity and defect bands compared with the luminescene intensity of the free heavy hole exciton band with increasing electron beam energy we deduce that the impurity and defect densities also increase as a function of depth.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalAdvanced Materials for Optics and Electronics
Volume3
Issue number1-6
DOIs
Publication statusPublished - 1 Jan 1994

Keywords

  • cathodoluminescence
  • defects
  • depth profiling
  • impurities
  • strain
  • ZnSe

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