Depth‐resolved cathodoluminescence of ZnSe epilayers

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In This paper we illustrate the use of an electron beam of variable energy to get depth information on the strain, impurity and defect distribution in ZnSe epilayers. From the increase in splitting of the free light and heavy hole exciton bands with increasing electron beam energy we deduce that the strain increases with depth. From the increase in the luminescence intensity of the impurity and defect bands compared with the luminescene intensity of the free heavy hole exciton band with increasing electron beam energy we deduce that the impurity and defect densities also increase as a function of depth.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalAdvanced Materials for Optics and Electronics
Volume3
Issue number1-6
DOIs
Publication statusPublished - 1 Jan 1994

Fingerprint

Cathodoluminescence
Epilayers
Electron beams
Impurities
Excitons
Defects
Defect density
Luminescence
LDS 751

Keywords

  • cathodoluminescence
  • defects
  • depth profiling
  • impurities
  • strain
  • ZnSe

Cite this

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Depth‐resolved cathodoluminescence of ZnSe epilayers. / Trager‐Cowan, Carol; Yang, F.; O'Donnell, K. P.

In: Advanced Materials for Optics and Electronics, Vol. 3, No. 1-6, 01.01.1994, p. 295-299.

Research output: Contribution to journalArticle

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