Depth resolved studies of indium content and strain in InGaN layers

S.M.D.S. Pereira, M.R. Correia, E.M. Ferreira Pereira Lopes, K.P. O'Donnell, C. Trager-Cowan, F. Sweeney, E. Alves, A.D. Sequeira, N. Franco, I.M. Watson

Research output: Contribution to journalArticle

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Abstract

A depth resolved study of optical and structural properties in wurtzite InGaN/GaN bilayers grown by MOCVD on sapphire substrates is reported. Depth resolved cathodoluminescence (CL), Rutherford backscattering spectrometry (RBS) and high resolution X-ray diffraction (HRXRD) were used to gain an insight into the composition and strain depth profiles. It is found that both quantities can vary considerably over depth. Two representative samples are discussed. The first shows a CL peak shift to the blue when the electron beam energy is increased. Such behaviour conforms to the In/Ga profile derived from RBS, where a linear decrease of the In mole fraction from the near surface (0.20) down to the near GaN/InGaN interface (0.14) region was found. The other sample discussed shows no depth variations of composition. However, the strain changes from nearly pseudomorphic, close the GaN interface, to an almost relaxed state close to the surface. This discrete variation of strain over depth, originates a double XRD and CL peak related to InGaN.
Original languageEnglish
Pages (from-to)59-64
Number of pages5
JournalPhysica Status Solidi B
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 2001

Fingerprint

Indium
Cathodoluminescence
indium
Rutherford backscattering spectroscopy
Spectrometry
cathodoluminescence
Aluminum Oxide
Metallorganic chemical vapor deposition
Chemical analysis
Sapphire
Structural properties
Electron beams
backscattering
Optical properties
X ray diffraction
Substrates
profiles
wurtzite
spectroscopy
metalorganic chemical vapor deposition

Keywords

  • indium content
  • InGaN layers
  • sapphire substrates
  • MOCVD

Cite this

Pereira, S.M.D.S. ; Correia, M.R. ; Ferreira Pereira Lopes, E.M. ; O'Donnell, K.P. ; Trager-Cowan, C. ; Sweeney, F. ; Alves, E. ; Sequeira, A.D. ; Franco, N. ; Watson, I.M. / Depth resolved studies of indium content and strain in InGaN layers. In: Physica Status Solidi B. 2001 ; Vol. 228, No. 1. pp. 59-64.
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Pereira, SMDS, Correia, MR, Ferreira Pereira Lopes, EM, O'Donnell, KP, Trager-Cowan, C, Sweeney, F, Alves, E, Sequeira, AD, Franco, N & Watson, IM 2001, 'Depth resolved studies of indium content and strain in InGaN layers', Physica Status Solidi B, vol. 228, no. 1, pp. 59-64. https://doi.org/10.1002/1521-3951(200111)228:1<59::AID-PSSB59>3.0.CO;2-A

Depth resolved studies of indium content and strain in InGaN layers. / Pereira, S.M.D.S.; Correia, M.R.; Ferreira Pereira Lopes, E.M.; O'Donnell, K.P.; Trager-Cowan, C.; Sweeney, F.; Alves, E.; Sequeira, A.D.; Franco, N.; Watson, I.M.

In: Physica Status Solidi B, Vol. 228, No. 1, 11.2001, p. 59-64.

Research output: Contribution to journalArticle

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T1 - Depth resolved studies of indium content and strain in InGaN layers

AU - Pereira, S.M.D.S.

AU - Correia, M.R.

AU - Ferreira Pereira Lopes, E.M.

AU - O'Donnell, K.P.

AU - Trager-Cowan, C.

AU - Sweeney, F.

AU - Alves, E.

AU - Sequeira, A.D.

AU - Franco, N.

AU - Watson, I.M.

PY - 2001/11

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N2 - A depth resolved study of optical and structural properties in wurtzite InGaN/GaN bilayers grown by MOCVD on sapphire substrates is reported. Depth resolved cathodoluminescence (CL), Rutherford backscattering spectrometry (RBS) and high resolution X-ray diffraction (HRXRD) were used to gain an insight into the composition and strain depth profiles. It is found that both quantities can vary considerably over depth. Two representative samples are discussed. The first shows a CL peak shift to the blue when the electron beam energy is increased. Such behaviour conforms to the In/Ga profile derived from RBS, where a linear decrease of the In mole fraction from the near surface (0.20) down to the near GaN/InGaN interface (0.14) region was found. The other sample discussed shows no depth variations of composition. However, the strain changes from nearly pseudomorphic, close the GaN interface, to an almost relaxed state close to the surface. This discrete variation of strain over depth, originates a double XRD and CL peak related to InGaN.

AB - A depth resolved study of optical and structural properties in wurtzite InGaN/GaN bilayers grown by MOCVD on sapphire substrates is reported. Depth resolved cathodoluminescence (CL), Rutherford backscattering spectrometry (RBS) and high resolution X-ray diffraction (HRXRD) were used to gain an insight into the composition and strain depth profiles. It is found that both quantities can vary considerably over depth. Two representative samples are discussed. The first shows a CL peak shift to the blue when the electron beam energy is increased. Such behaviour conforms to the In/Ga profile derived from RBS, where a linear decrease of the In mole fraction from the near surface (0.20) down to the near GaN/InGaN interface (0.14) region was found. The other sample discussed shows no depth variations of composition. However, the strain changes from nearly pseudomorphic, close the GaN interface, to an almost relaxed state close to the surface. This discrete variation of strain over depth, originates a double XRD and CL peak related to InGaN.

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KW - InGaN layers

KW - sapphire substrates

KW - MOCVD

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JO - Physica Status Solidi B

JF - Physica Status Solidi B

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