Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

R. W. Martin, D. Rading, R. Kersting, E. Tallarek, E. Nogales, D. Amabile, K. Wang, V. Katchkanov, C. Trager-Cowan, K. P. O'Donnell, I. M. Watson, V. Matias, A. Vantomme, K. Lorenz, E. Alves

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7 Citations (Scopus)


Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

Original languageEnglish
Pages (from-to)1927-1930
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 12 Jun 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005


  • AlInN/GaN bilayers
  • cathodoluminescence spectra
  • photoluminescence excitation

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