Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

R. W. Martin, D. Rading, R. Kersting, E. Tallarek, E. Nogales, D. Amabile, K. Wang, V. Katchkanov, C. Trager-Cowan, K. P. O'Donnell, I. M. Watson, V. Matias, A. Vantomme, K. Lorenz, E. Alves

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

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cathodoluminescence
secondary ion mass spectrometry
ions
electron energy
luminescence
photoluminescence
profiles
geometry
excitation

Keywords

  • AlInN/GaN bilayers
  • cathodoluminescence spectra
  • photoluminescence excitation

Cite this

Martin, R. W. ; Rading, D. ; Kersting, R. ; Tallarek, E. ; Nogales, E. ; Amabile, D. ; Wang, K. ; Katchkanov, V. ; Trager-Cowan, C. ; O'Donnell, K. P. ; Watson, I. M. ; Matias, V. ; Vantomme, A. ; Lorenz, K. ; Alves, E. / Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 ; Vol. 3, No. 6. pp. 1927-1930.
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abstract = "Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.",
keywords = "AlInN/GaN bilayers, cathodoluminescence spectra, photoluminescence excitation",
author = "Martin, {R. W.} and D. Rading and R. Kersting and E. Tallarek and E. Nogales and D. Amabile and K. Wang and V. Katchkanov and C. Trager-Cowan and O'Donnell, {K. P.} and Watson, {I. M.} and V. Matias and A. Vantomme and K. Lorenz and E. Alves",
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journal = "Physica Status Solidi C",
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Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence. / Martin, R. W.; Rading, D.; Kersting, R.; Tallarek, E.; Nogales, E.; Amabile, D.; Wang, K.; Katchkanov, V.; Trager-Cowan, C.; O'Donnell, K. P.; Watson, I. M.; Matias, V.; Vantomme, A.; Lorenz, K.; Alves, E.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, No. 6, 12.06.2006, p. 1927-1930.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

AU - Martin, R. W.

AU - Rading, D.

AU - Kersting, R.

AU - Tallarek, E.

AU - Nogales, E.

AU - Amabile, D.

AU - Wang, K.

AU - Katchkanov, V.

AU - Trager-Cowan, C.

AU - O'Donnell, K. P.

AU - Watson, I. M.

AU - Matias, V.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

PY - 2006/6/12

Y1 - 2006/6/12

N2 - Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

AB - Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

KW - AlInN/GaN bilayers

KW - cathodoluminescence spectra

KW - photoluminescence excitation

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DO - 10.1002/pssc.200565411

M3 - Conference article

VL - 3

SP - 1927

EP - 1930

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IS - 6

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