Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

R. W. Martin; D. Rading; R. Kersting; E. Tallarek; E. Nogales; D. Amabile; K. Wang; V. Katchkanov; C. Trager-Cowan; K. P. O'Donnell; I. M. Watson; V. Matias; A. Vantomme; K. Lorenz; E. Alves

doi:10.1002/pssc.200565411

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

R. W. Martin^*, D. Rading, R. Kersting, E. Tallarek, E. Nogales, D. Amabile, K. Wang, V. Katchkanov, C. Trager-Cowan, K. P. O'Donnell, I. M. Watson, V. Matias, A. Vantomme, K. Lorenz, E. Alves

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

Original language	English
Pages (from-to)	1927-1930
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200565411
Publication status	Published - 12 Jun 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 28 Aug 2005 → 2 Sept 2005

Keywords

AlInN/GaN bilayers
cathodoluminescence spectra
photoluminescence excitation

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10.1002/pssc.200565411

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Martin, R. W., Rading, D., Kersting, R., Tallarek, E., Nogales, E., Amabile, D., Wang, K., Katchkanov, V., Trager-Cowan, C., O'Donnell, K. P., Watson, I. M., Matias, V., Vantomme, A., Lorenz, K., & Alves, E. (2006). Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence. Physica Status Solidi (C) Current Topics in Solid State Physics, 3(6), 1927-1930. https://doi.org/10.1002/pssc.200565411

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abstract = "Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.",

keywords = "AlInN/GaN bilayers, cathodoluminescence spectra, photoluminescence excitation",

author = "Martin, {R. W.} and D. Rading and R. Kersting and E. Tallarek and E. Nogales and D. Amabile and K. Wang and V. Katchkanov and C. Trager-Cowan and O'Donnell, {K. P.} and Watson, {I. M.} and V. Matias and A. Vantomme and K. Lorenz and E. Alves",

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month = jun,

day = "12",

doi = "10.1002/pssc.200565411",

language = "English",

volume = "3",

pages = "1927--1930",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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Martin, RW, Rading, D, Kersting, R, Tallarek, E, Nogales, E, Amabile, D, Wang, K, Katchkanov, V, Trager-Cowan, C, O'Donnell, KP, Watson, IM, Matias, V, Vantomme, A, Lorenz, K & Alves, E 2006, 'Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 3, no. 6, pp. 1927-1930. https://doi.org/10.1002/pssc.200565411

TY - JOUR

T1 - Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

AU - Martin, R. W.

AU - Rading, D.

AU - Kersting, R.

AU - Tallarek, E.

AU - Nogales, E.

AU - Amabile, D.

AU - Wang, K.

AU - Katchkanov, V.

AU - Trager-Cowan, C.

AU - O'Donnell, K. P.

AU - Watson, I. M.

AU - Matias, V.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

PY - 2006/6/12

Y1 - 2006/6/12

N2 - Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

AB - Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed.

KW - AlInN/GaN bilayers

KW - cathodoluminescence spectra

KW - photoluminescence excitation

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U2 - 10.1002/pssc.200565411

DO - 10.1002/pssc.200565411

M3 - Conference article

AN - SCOPUS:33746364178

SN - 1862-6351

VL - 3

SP - 1927

EP - 1930

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

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Keywords

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