Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing

S.M.D.S. Pereira, E.M. Ferreira Pereira Lopes, E. Alves, N.P. Barradas, K.P. O'Donnell, C. Liu, C.J. Deatcher, I.M. Watson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report a detailed compositional analysis of InxGa1-xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backscattering spectroscopy (RBS) analysis. Simulation of the RBS spectra provides precise estimations of individual well compositions, thickness, and the extent of In/Ga intermixing. It is ascertained that intermixing, and In segregation to the GaN cap layer, strongly increase with the value of x in the wells and with the number of periods in the MQW stack. Deleterious effects of intermixing on the spectral properties are apparent when comparing the photoluminescence spectra of two MQW structures with 8 and 18 wells, grown under the same nominal conditions.
LanguageEnglish
Pages2950-2952
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
Publication statusPublished - 2002

Fingerprint

backscattering
quantum wells
grazing incidence
caps
spectroscopy
metalorganic chemical vapor deposition
photoluminescence
profiles
simulation

Keywords

  • quantum wells
  • Rutherford backscattering
  • intermixing

Cite this

Pereira, S.M.D.S. ; Ferreira Pereira Lopes, E.M. ; Alves, E. ; Barradas, N.P. ; O'Donnell, K.P. ; Liu, C. ; Deatcher, C.J. ; Watson, I.M. / Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. In: Applied Physics Letters. 2002 ; Vol. 81, No. 16. pp. 2950-2952.
@article{50e21e976e82497f9ec14b8e7fa52f0b,
title = "Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing",
abstract = "We report a detailed compositional analysis of InxGa1-xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backscattering spectroscopy (RBS) analysis. Simulation of the RBS spectra provides precise estimations of individual well compositions, thickness, and the extent of In/Ga intermixing. It is ascertained that intermixing, and In segregation to the GaN cap layer, strongly increase with the value of x in the wells and with the number of periods in the MQW stack. Deleterious effects of intermixing on the spectral properties are apparent when comparing the photoluminescence spectra of two MQW structures with 8 and 18 wells, grown under the same nominal conditions.",
keywords = "quantum wells , Rutherford backscattering, intermixing",
author = "S.M.D.S. Pereira and {Ferreira Pereira Lopes}, E.M. and E. Alves and N.P. Barradas and K.P. O'Donnell and C. Liu and C.J. Deatcher and I.M. Watson",
year = "2002",
doi = "10.1063/1.1513661",
language = "English",
volume = "81",
pages = "2950--2952",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "16",

}

Pereira, SMDS, Ferreira Pereira Lopes, EM, Alves, E, Barradas, NP, O'Donnell, KP, Liu, C, Deatcher, CJ & Watson, IM 2002, 'Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing' Applied Physics Letters, vol. 81, no. 16, pp. 2950-2952. https://doi.org/10.1063/1.1513661

Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. / Pereira, S.M.D.S.; Ferreira Pereira Lopes, E.M.; Alves, E.; Barradas, N.P.; O'Donnell, K.P.; Liu, C.; Deatcher, C.J.; Watson, I.M.

In: Applied Physics Letters, Vol. 81, No. 16, 2002, p. 2950-2952.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing

AU - Pereira, S.M.D.S.

AU - Ferreira Pereira Lopes, E.M.

AU - Alves, E.

AU - Barradas, N.P.

AU - O'Donnell, K.P.

AU - Liu, C.

AU - Deatcher, C.J.

AU - Watson, I.M.

PY - 2002

Y1 - 2002

N2 - We report a detailed compositional analysis of InxGa1-xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backscattering spectroscopy (RBS) analysis. Simulation of the RBS spectra provides precise estimations of individual well compositions, thickness, and the extent of In/Ga intermixing. It is ascertained that intermixing, and In segregation to the GaN cap layer, strongly increase with the value of x in the wells and with the number of periods in the MQW stack. Deleterious effects of intermixing on the spectral properties are apparent when comparing the photoluminescence spectra of two MQW structures with 8 and 18 wells, grown under the same nominal conditions.

AB - We report a detailed compositional analysis of InxGa1-xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backscattering spectroscopy (RBS) analysis. Simulation of the RBS spectra provides precise estimations of individual well compositions, thickness, and the extent of In/Ga intermixing. It is ascertained that intermixing, and In segregation to the GaN cap layer, strongly increase with the value of x in the wells and with the number of periods in the MQW stack. Deleterious effects of intermixing on the spectral properties are apparent when comparing the photoluminescence spectra of two MQW structures with 8 and 18 wells, grown under the same nominal conditions.

KW - quantum wells

KW - Rutherford backscattering

KW - intermixing

U2 - 10.1063/1.1513661

DO - 10.1063/1.1513661

M3 - Article

VL - 81

SP - 2950

EP - 2952

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -