Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers

S. Hernández, R. Cuscó, L. Artús, K. P. O'Donnell, R. W. Martin, I. M. Watson, Y. Nanishi, M. Kurouchi, W. Van Der Stricht

Research output: Contribution to journalConference article

Abstract

The behavior of the E2 and A1 (LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A 1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E 2 and A1(LO) modes of InGaN.

LanguageEnglish
Article numberE3.22
Pages179-184
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume831
DOIs
Publication statusPublished - 25 Aug 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20043 Dec 2004

Fingerprint

Epilayers
Phonons
Chemical analysis
Linewidth
Cations
Raman scattering
Positive ions
phonons
disorders
Raman spectra
cations

Keywords

  • optical phonons
  • Raman scattering
  • InGaN epilayers

Cite this

Hernández, S. ; Cuscó, R. ; Artús, L. ; O'Donnell, K. P. ; Martin, R. W. ; Watson, I. M. ; Nanishi, Y. ; Kurouchi, M. ; Van Der Stricht, W. / Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 831. pp. 179-184.
@article{5d31335613ff4ec4a56631df75b9d1c5,
title = "Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers",
abstract = "The behavior of the E2 and A1 (LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A 1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈60{\%} and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E 2 and A1(LO) modes of InGaN.",
keywords = "optical phonons, Raman scattering, InGaN epilayers",
author = "S. Hern{\'a}ndez and R. Cusc{\'o} and L. Art{\'u}s and O'Donnell, {K. P.} and Martin, {R. W.} and Watson, {I. M.} and Y. Nanishi and M. Kurouchi and {Van Der Stricht}, W.",
year = "2005",
month = "8",
day = "25",
doi = "10.1557/PROC-831-E3.22",
language = "English",
volume = "831",
pages = "179--184",
journal = "MRS Online Proceedings Library",
issn = "1946-4274",

}

Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers. / Hernández, S. ; Cuscó, R.; Artús, L.; O'Donnell, K. P.; Martin, R. W.; Watson, I. M.; Nanishi, Y.; Kurouchi, M.; Van Der Stricht, W.

In: Materials Research Society Symposium Proceedings, Vol. 831, E3.22, 25.08.2005, p. 179-184.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers

AU - Hernández, S.

AU - Cuscó, R.

AU - Artús, L.

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Watson, I. M.

AU - Nanishi, Y.

AU - Kurouchi, M.

AU - Van Der Stricht, W.

PY - 2005/8/25

Y1 - 2005/8/25

N2 - The behavior of the E2 and A1 (LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A 1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E 2 and A1(LO) modes of InGaN.

AB - The behavior of the E2 and A1 (LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A 1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E 2 and A1(LO) modes of InGaN.

KW - optical phonons

KW - Raman scattering

KW - InGaN epilayers

UR - http://www.scopus.com/inward/record.url?scp=23844503904&partnerID=8YFLogxK

U2 - 10.1557/PROC-831-E3.22

DO - 10.1557/PROC-831-E3.22

M3 - Conference article

VL - 831

SP - 179

EP - 184

JO - MRS Online Proceedings Library

T2 - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

M1 - E3.22

ER -