Dependence of the e2 and A1(LO) modes on InN fraction in InGaN epilayers

S. Hernández, R. Cuscó, L. Artús, K. P. O'Donnell, R. W. Martin, I. M. Watson, Y. Nanishi, M. Kurouchi, W. Van Der Stricht

Research output: Contribution to journalConference article

Abstract

The behavior of the E2 and A1 (LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A 1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E 2 and A1(LO) modes of InGaN.

Original languageEnglish
Article numberE3.22
Pages (from-to)179-184
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume831
DOIs
Publication statusPublished - 25 Aug 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20043 Dec 2004

Keywords

  • optical phonons
  • Raman scattering
  • InGaN epilayers

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