Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

S. Hernandez; R. Cusco; L. Artus; K.P. O'Donnell; R.W. Martin; I.M. Watson; Y. Nanishi; M. Kurouchi; W. van der Stricht

doi:10.1557/PROC-831-E3.22

Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

S. Hernandez, R. Cusco, L. Artus, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, W. van der Stricht

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Abstract

The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

Original language	English
Article number	E3.22
Number of pages	6
Journal	MRS Online Proceedings Library
Volume	831
DOIs	https://doi.org/10.1557/PROC-831-E3.22
Publication status	Published - 2004

Keywords

InGaN epilayers
InN fraction
Raman scattering

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10.1557/PROC-831-E3.22

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title = "Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers",

abstract = "The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.",

keywords = "InGaN epilayers , InN fraction , Raman scattering",

author = "S. Hernandez and R. Cusco and L. Artus and K.P. O'Donnell and R.W. Martin and I.M. Watson and Y. Nanishi and M. Kurouchi and {van der Stricht}, W.",

year = "2004",

doi = "10.1557/PROC-831-E3.22",

language = "English",

volume = "831",

journal = "MRS Online Proceedings Library ",

issn = "0272-9172",

publisher = "Cambridge University Press",

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TY - JOUR

T1 - Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

AU - Hernandez, S.

AU - Cusco, R.

AU - Artus, L.

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Nanishi, Y.

AU - Kurouchi, M.

AU - van der Stricht, W.

PY - 2004

Y1 - 2004

N2 - The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

AB - The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

KW - InGaN epilayers

KW - InN fraction

KW - Raman scattering

U2 - 10.1557/PROC-831-E3.22

DO - 10.1557/PROC-831-E3.22

M3 - Article

SN - 0272-9172

VL - 831

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

M1 - E3.22

ER -

Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

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Keywords

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