Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

S. Hernandez, R. Cusco, L. Artus, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, W. van der Stricht

Research output: Contribution to journalArticle

Abstract

The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.
Original languageEnglish
Article numberE3.22
Number of pages6
JournalMRS Online Proceedings Library
Volume831
DOIs
Publication statusPublished - 2004

Keywords

  • InGaN epilayers
  • InN fraction
  • Raman scattering

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