@inproceedings{907274f1598d480db779830367e671bb,
title = "Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers",
abstract = "The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN. ",
keywords = "MBE , raman-scattering, indium nitride, band-gap , phonon , alloys , sapphire , epitaxy , growth , layers ",
author = "S. Hernandez and R. Cusco and L. Artus and K.P. O'Donnell and Robert Martin and I.M. Watson and Y. Nanishi and M. Kurouchi and {van der Stricht}, W.",
year = "2005",
month = jul,
day = "1",
language = "English",
isbn = "1558997792",
series = "Materials research society symposium proceedings ",
publisher = "Materials research society",
pages = "179--184",
editor = "Gil, {B. } and Kuzuhara, {M. } and {Manfra }, {M. } and Wetzel, {C. }",
booktitle = "GaN, AIN, InN and Their Alloys",
note = "Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 03-12-2004",
}