The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.
|Title of host publication||GaN, AIN, InN and Their Alloys|
|Editors||B. Gil, M. Kuzuhara, M. Manfra , C. Wetzel|
|Place of Publication||Warrendale|
|Number of pages||5|
|Publication status||Published - 1 Jul 2005|
|Event||Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting - Boston, United States|
Duration: 29 Nov 2004 → 3 Dec 2004
|Name||Materials research society symposium proceedings|
|Publisher||Materials research society|
|Conference||Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting|
|Period||29/11/04 → 3/12/04|
- indium nitride
Hernandez, S., Cusco, R., Artus, L., O'Donnell, K. P., Martin, R., Watson, I. M., ... van der Stricht, W. (2005). Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In B. Gil, M. Kuzuhara, M. Manfra , & C. Wetzel (Eds.), GaN, AIN, InN and Their Alloys (pp. 179-184). (Materials research society symposium proceedings ; Vol. 831). Warrendale.