Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

S. Hernandez, R. Cusco, L. Artus, K.P. O'Donnell, Robert Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, W. van der Stricht

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.
Original languageEnglish
Title of host publicationGaN, AIN, InN and Their Alloys
EditorsB. Gil, M. Kuzuhara, M. Manfra , C. Wetzel
Place of PublicationWarrendale
Pages179-184
Number of pages5
Publication statusPublished - 1 Jul 2005
EventSymposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting - Boston, United States
Duration: 29 Nov 20043 Dec 2004

Publication series

NameMaterials research society symposium proceedings
PublisherMaterials research society
Volume831
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting
CountryUnited States
CityBoston
Period29/11/043/12/04

Keywords

  • MBE
  • raman-scattering
  • indium nitride
  • band-gap
  • phonon
  • alloys
  • sapphire
  • epitaxy
  • growth
  • layers

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    Hernandez, S., Cusco, R., Artus, L., O'Donnell, K. P., Martin, R., Watson, I. M., ... van der Stricht, W. (2005). Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In B. Gil, M. Kuzuhara, M. Manfra , & C. Wetzel (Eds.), GaN, AIN, InN and Their Alloys (pp. 179-184). (Materials research society symposium proceedings ; Vol. 831). Warrendale.