The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.
|Name||Materials research society symposium proceedings |
|Publisher||Materials research society|
|Conference||Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting |
|Period||29/11/04 → 3/12/04|
- indium nitride