Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

S. Hernandez, R. Cusco, L. Artus, K.P. O'Donnell, Robert Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, W. van der Stricht

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.
LanguageEnglish
Title of host publicationGaN, AIN, InN and Their Alloys
EditorsB. Gil, M. Kuzuhara, M. Manfra , C. Wetzel
Place of PublicationWarrendale
Pages179-184
Number of pages5
Publication statusPublished - 1 Jul 2005
EventSymposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting - Boston, United States
Duration: 29 Nov 20043 Dec 2004

Publication series

NameMaterials research society symposium proceedings
PublisherMaterials research society
Volume831
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting
CountryUnited States
CityBoston
Period29/11/043/12/04

Fingerprint

phonons
disorders
Raman spectra
cations

Keywords

  • MBE
  • raman-scattering
  • indium nitride
  • band-gap
  • phonon
  • alloys
  • sapphire
  • epitaxy
  • growth
  • layers

Cite this

Hernandez, S., Cusco, R., Artus, L., O'Donnell, K. P., Martin, R., Watson, I. M., ... van der Stricht, W. (2005). Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In B. Gil, M. Kuzuhara, M. Manfra , & C. Wetzel (Eds.), GaN, AIN, InN and Their Alloys (pp. 179-184). (Materials research society symposium proceedings ; Vol. 831). Warrendale.
Hernandez, S. ; Cusco, R. ; Artus, L. ; O'Donnell, K.P. ; Martin, Robert ; Watson, I.M. ; Nanishi, Y. ; Kurouchi, M. ; van der Stricht, W. / Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. GaN, AIN, InN and Their Alloys. editor / B. Gil ; M. Kuzuhara ; M. Manfra ; C. Wetzel. Warrendale, 2005. pp. 179-184 (Materials research society symposium proceedings ).
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title = "Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers",
abstract = "The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60{\%} and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.",
keywords = "MBE , raman-scattering, indium nitride, band-gap , phonon , alloys , sapphire , epitaxy , growth , layers",
author = "S. Hernandez and R. Cusco and L. Artus and K.P. O'Donnell and Robert Martin and I.M. Watson and Y. Nanishi and M. Kurouchi and {van der Stricht}, W.",
year = "2005",
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Hernandez, S, Cusco, R, Artus, L, O'Donnell, KP, Martin, R, Watson, IM, Nanishi, Y, Kurouchi, M & van der Stricht, W 2005, Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. in B Gil, M Kuzuhara, M Manfra & C Wetzel (eds), GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings , vol. 831, Warrendale, pp. 179-184, Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting , Boston, United States, 29/11/04.

Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. / Hernandez, S.; Cusco, R.; Artus, L.; O'Donnell, K.P.; Martin, Robert; Watson, I.M.; Nanishi, Y.; Kurouchi, M.; van der Stricht, W.

GaN, AIN, InN and Their Alloys. ed. / B. Gil; M. Kuzuhara; M. Manfra ; C. Wetzel. Warrendale, 2005. p. 179-184 (Materials research society symposium proceedings ; Vol. 831).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

AU - Hernandez, S.

AU - Cusco, R.

AU - Artus, L.

AU - O'Donnell, K.P.

AU - Martin, Robert

AU - Watson, I.M.

AU - Nanishi, Y.

AU - Kurouchi, M.

AU - van der Stricht, W.

PY - 2005/7/1

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N2 - The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.

AB - The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.

KW - MBE

KW - raman-scattering

KW - indium nitride

KW - band-gap

KW - phonon

KW - alloys

KW - sapphire

KW - epitaxy

KW - growth

KW - layers

M3 - Conference contribution book

SN - 1558997792

T3 - Materials research society symposium proceedings

SP - 179

EP - 184

BT - GaN, AIN, InN and Their Alloys

A2 - Gil, B.

A2 - Kuzuhara, M.

A2 - Manfra , M.

A2 - Wetzel, C.

CY - Warrendale

ER -

Hernandez S, Cusco R, Artus L, O'Donnell KP, Martin R, Watson IM et al. Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In Gil B, Kuzuhara M, Manfra M, Wetzel C, editors, GaN, AIN, InN and Their Alloys. Warrendale. 2005. p. 179-184. (Materials research society symposium proceedings ).