Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5% continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.
LanguageEnglish
Pages405-413
Number of pages8
JournalJournal of Electromagnetic Waves and Applications
Volume23
Issue number2-3
DOIs
Publication statusPublished - 2009

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foundries
Foundries
Silicon
Bandpass filters
bandpass filters
microelectromechanical systems
MEMS
Demonstrations
Tuning
tuning
capacitors
silicon
Capacitors
microwave filters
Microwave filters
inductors
Insertion losses
insertion loss
Capacitance
Actuators

Keywords

  • tunable microwave filter
  • silicon foundry process
  • silicon substrate
  • capacitator

Cite this

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title = "Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process",
abstract = "A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5{\%} continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.",
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Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process. / Li, L.; Uttamchandani, D.G.

In: Journal of Electromagnetic Waves and Applications, Vol. 23, No. 2-3, 2009, p. 405-413.

Research output: Contribution to journalArticle

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