Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells

S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, N. P. Barradas, A. D. Sequeira, N. Franco, I. M. Watson, C. Liu

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We compare the structural and spectral properties of two multi quantum wells (MQWs), grown by metal organic chemical vapour deposition under the same nominal conditions, with a different number of periods. The MQWs, each with 20% InN and containing 8 and 18 wells, respectively, grew on-axis and coherent to GaN, as revealed by X-ray diffraction reciprocal space mapping (RSM) analysis. Comparison of the asymmetrical (105) RSMs indicates an overall structural deterioration and greater well-barrier intermixing for the MQW with the larger number of wells. Moreover, the composition of the MQWs was depth-profiled by grazing incidence Rutherford backscattering spectrometry (RBS). RBS further evidences strong intermixing in the 18-well heterostructure. The deleterious effects of intermixing on the emission spectrum are revealed by low temperature photoluminescence spectroscopy. Despite similar peak emission energies (ΔE < 45 meV) the 8-well structure shows a more symmetric and narrow peak (FWHM ≈ 100 meV) in comparison with that of the 18-well sample (FWHM ≈ 170 meV). Surface analyses by atomic force and scanning electron microscopy show an increased density, size and depth of V-pit defects on the 18-well structure. These results suggest that dislocations and pitting result from a larger elastic strain energy accumulated in the thicker MQW stack and are a fundamental intermixing mechanism for InGaN/GaN MQWs.

Original languageEnglish
Pages (from-to)302-306
Number of pages5
JournalPhysica Status Solidi C - Current Topics in Solid State Physics
Volume0
Issue number1
DOIs
Publication statusPublished - 1 Dec 2002
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 22 Jul 200225 Jul 2002

Fingerprint

Semiconductor quantum wells
Structural properties
Optical properties
quantum wells
degradation
optical properties
Degradation
Rutherford backscattering spectroscopy
Full width at half maximum
Spectrometry
backscattering
spectroscopy
Organic Chemicals
Photoluminescence spectroscopy
pitting
Organic chemicals
Strain energy
Pitting
grazing incidence
deterioration

Keywords

  • multi quantum wells (MQWs)
  • emission spectroscopy
  • metallorganic chemical vapor deposition
  • mixing
  • nitrides
  • optical properties
  • photoluminescence spectroscopy
  • rutherford backscattering spectroscopy
  • scanning electron microscopy
  • x ray diffraction

Cite this

Pereira, S. ; Correia, M. R. ; Pereira, E. ; O'Donnell, K. P. ; Alves, E. ; Barradas, N. P. ; Sequeira, A. D. ; Franco, N. ; Watson, I. M. ; Liu, C. / Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells. In: Physica Status Solidi C - Current Topics in Solid State Physics. 2002 ; Vol. 0, No. 1. pp. 302-306.
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title = "Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells",
abstract = "We compare the structural and spectral properties of two multi quantum wells (MQWs), grown by metal organic chemical vapour deposition under the same nominal conditions, with a different number of periods. The MQWs, each with 20{\%} InN and containing 8 and 18 wells, respectively, grew on-axis and coherent to GaN, as revealed by X-ray diffraction reciprocal space mapping (RSM) analysis. Comparison of the asymmetrical (105) RSMs indicates an overall structural deterioration and greater well-barrier intermixing for the MQW with the larger number of wells. Moreover, the composition of the MQWs was depth-profiled by grazing incidence Rutherford backscattering spectrometry (RBS). RBS further evidences strong intermixing in the 18-well heterostructure. The deleterious effects of intermixing on the emission spectrum are revealed by low temperature photoluminescence spectroscopy. Despite similar peak emission energies (ΔE < 45 meV) the 8-well structure shows a more symmetric and narrow peak (FWHM ≈ 100 meV) in comparison with that of the 18-well sample (FWHM ≈ 170 meV). Surface analyses by atomic force and scanning electron microscopy show an increased density, size and depth of V-pit defects on the 18-well structure. These results suggest that dislocations and pitting result from a larger elastic strain energy accumulated in the thicker MQW stack and are a fundamental intermixing mechanism for InGaN/GaN MQWs.",
keywords = "multi quantum wells (MQWs), emission spectroscopy, metallorganic chemical vapor deposition, mixing, nitrides, optical properties, photoluminescence spectroscopy, rutherford backscattering spectroscopy, scanning electron microscopy, x ray diffraction",
author = "S. Pereira and Correia, {M. R.} and E. Pereira and O'Donnell, {K. P.} and E. Alves and Barradas, {N. P.} and Sequeira, {A. D.} and N. Franco and Watson, {I. M.} and C. Liu",
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Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells. / Pereira, S.; Correia, M. R.; Pereira, E.; O'Donnell, K. P.; Alves, E.; Barradas, N. P.; Sequeira, A. D.; Franco, N.; Watson, I. M.; Liu, C.

In: Physica Status Solidi C - Current Topics in Solid State Physics, Vol. 0, No. 1, 01.12.2002, p. 302-306.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells

AU - Pereira, S.

AU - Correia, M. R.

AU - Pereira, E.

AU - O'Donnell, K. P.

AU - Alves, E.

AU - Barradas, N. P.

AU - Sequeira, A. D.

AU - Franco, N.

AU - Watson, I. M.

AU - Liu, C.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We compare the structural and spectral properties of two multi quantum wells (MQWs), grown by metal organic chemical vapour deposition under the same nominal conditions, with a different number of periods. The MQWs, each with 20% InN and containing 8 and 18 wells, respectively, grew on-axis and coherent to GaN, as revealed by X-ray diffraction reciprocal space mapping (RSM) analysis. Comparison of the asymmetrical (105) RSMs indicates an overall structural deterioration and greater well-barrier intermixing for the MQW with the larger number of wells. Moreover, the composition of the MQWs was depth-profiled by grazing incidence Rutherford backscattering spectrometry (RBS). RBS further evidences strong intermixing in the 18-well heterostructure. The deleterious effects of intermixing on the emission spectrum are revealed by low temperature photoluminescence spectroscopy. Despite similar peak emission energies (ΔE < 45 meV) the 8-well structure shows a more symmetric and narrow peak (FWHM ≈ 100 meV) in comparison with that of the 18-well sample (FWHM ≈ 170 meV). Surface analyses by atomic force and scanning electron microscopy show an increased density, size and depth of V-pit defects on the 18-well structure. These results suggest that dislocations and pitting result from a larger elastic strain energy accumulated in the thicker MQW stack and are a fundamental intermixing mechanism for InGaN/GaN MQWs.

AB - We compare the structural and spectral properties of two multi quantum wells (MQWs), grown by metal organic chemical vapour deposition under the same nominal conditions, with a different number of periods. The MQWs, each with 20% InN and containing 8 and 18 wells, respectively, grew on-axis and coherent to GaN, as revealed by X-ray diffraction reciprocal space mapping (RSM) analysis. Comparison of the asymmetrical (105) RSMs indicates an overall structural deterioration and greater well-barrier intermixing for the MQW with the larger number of wells. Moreover, the composition of the MQWs was depth-profiled by grazing incidence Rutherford backscattering spectrometry (RBS). RBS further evidences strong intermixing in the 18-well heterostructure. The deleterious effects of intermixing on the emission spectrum are revealed by low temperature photoluminescence spectroscopy. Despite similar peak emission energies (ΔE < 45 meV) the 8-well structure shows a more symmetric and narrow peak (FWHM ≈ 100 meV) in comparison with that of the 18-well sample (FWHM ≈ 170 meV). Surface analyses by atomic force and scanning electron microscopy show an increased density, size and depth of V-pit defects on the 18-well structure. These results suggest that dislocations and pitting result from a larger elastic strain energy accumulated in the thicker MQW stack and are a fundamental intermixing mechanism for InGaN/GaN MQWs.

KW - multi quantum wells (MQWs)

KW - emission spectroscopy

KW - metallorganic chemical vapor deposition

KW - mixing

KW - nitrides

KW - optical properties

KW - photoluminescence spectroscopy

KW - rutherford backscattering spectroscopy

KW - scanning electron microscopy

KW - x ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84875091108&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390049

DO - 10.1002/pssc.200390049

M3 - Conference article

VL - 0

SP - 302

EP - 306

JO - Physica Status Solidi C - Current Topics in Solid State Physics

JF - Physica Status Solidi C - Current Topics in Solid State Physics

SN - 1610-1634

IS - 1

ER -