Abstract
| Original language | English |
|---|---|
| Title of host publication | Frontiers in electronics |
| Editors | H. Iwai, Y. Nishi, M. S. Shur, H. Wong |
| Pages | 365-374 |
| Number of pages | 10 |
| Volume | 41 |
| DOIs | |
| Publication status | Published - 2006 |
| Event | Workshop on Frontiers in Electronics (WOFE-04) - Aruba, Netherlands Duration: 17 Dec 2004 → 23 Dec 2004 |
Publication series
| Name | Selected topics in electronics and systems |
|---|---|
| Volume | 41 |
Conference
| Conference | Workshop on Frontiers in Electronics (WOFE-04) |
|---|---|
| Country | Netherlands |
| City | Aruba |
| Period | 17/12/04 → 23/12/04 |
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Keywords
- thin-film transistors
- devices
- circuits
- mechanical strain
- amorphous-silicon
Cite this
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Deformable electronic surfaces. / Sturm, J. C.; Hsu, P. I.; Gleskova, Helena; Bhattacharya, R.; Wagner, S.
Frontiers in electronics . ed. / H. Iwai; Y. Nishi; M. S. Shur; H. Wong. Vol. 41 2006. p. 365-374 (Selected topics in electronics and systems ; Vol. 41).Research output: Chapter in Book/Report/Conference proceeding › Chapter
TY - CHAP
T1 - Deformable electronic surfaces
AU - Sturm, J. C.
AU - Hsu, P. I.
AU - Gleskova, Helena
AU - Bhattacharya, R.
AU - Wagner, S.
PY - 2006
Y1 - 2006
N2 - In this paper a technological approach for the fabrication of deformable electronic surfaces is reviewed. The approach consists of the fabrication of thin film devices on a flat but deformable substrate such as a plastic or glass foil using conventional processing tools. After the fabrication, the foil can be deformed to other shapes by air pressure or stamping. A spherical cap shape is used as a model system. This deformation induces large stress in the substrate, which is plastically deformed. To avoid damage to the thin film devices, they are built on top of "hard" islands, which limit the strain in the devices to manageable levels. Amorphous silicon TFT's on silicon nitride islands show little qualitative change in characteristics after a plastic deformation of the substrate to strain levels over 5%. Interconnect lines between islands are subjected to a large strain if they are deposited and patterned before the substrate deformation, and require novel approaches.
AB - In this paper a technological approach for the fabrication of deformable electronic surfaces is reviewed. The approach consists of the fabrication of thin film devices on a flat but deformable substrate such as a plastic or glass foil using conventional processing tools. After the fabrication, the foil can be deformed to other shapes by air pressure or stamping. A spherical cap shape is used as a model system. This deformation induces large stress in the substrate, which is plastically deformed. To avoid damage to the thin film devices, they are built on top of "hard" islands, which limit the strain in the devices to manageable levels. Amorphous silicon TFT's on silicon nitride islands show little qualitative change in characteristics after a plastic deformation of the substrate to strain levels over 5%. Interconnect lines between islands are subjected to a large strain if they are deposited and patterned before the substrate deformation, and require novel approaches.
KW - thin-film transistors
KW - devices
KW - circuits
KW - mechanical strain
KW - amorphous-silicon
U2 - 10.1142/9789812773081_0020
DO - 10.1142/9789812773081_0020
M3 - Chapter
SN - 9812568840
VL - 41
T3 - Selected topics in electronics and systems
SP - 365
EP - 374
BT - Frontiers in electronics
A2 - Iwai, H.
A2 - Nishi, Y.
A2 - Shur, M. S.
A2 - Wong, H.
ER -