Defect evolution and interplay in n-type InN

Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente, Bertrand Lacroix, Pierre Ruterana, Simon Kraeusel, Benjamin Hourahine, William J. Schaff

Research output: Contribution to journalLetter

6 Citations (Scopus)

Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
LanguageEnglish
Article number091907
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27 Feb 2012

Fingerprint

defects
positron annihilation
point defects
sublattices
buffers
transmission electron microscopy
spectroscopy

Keywords

  • defect evolution
  • n-type InN
  • dislocation densities

Cite this

Rauch, C., Tuomisto, F., Vilalta-Clemente, A., Lacroix, B., Ruterana, P., Kraeusel, S., ... Schaff, W. J. (2012). Defect evolution and interplay in n-type InN. Applied Physics Letters, 100(9), [091907]. https://doi.org/10.1063/1.3688038
Rauch, Christian ; Tuomisto, Filip ; Vilalta-Clemente, Arantxa ; Lacroix, Bertrand ; Ruterana, Pierre ; Kraeusel, Simon ; Hourahine, Benjamin ; Schaff, William J. / Defect evolution and interplay in n-type InN. In: Applied Physics Letters. 2012 ; Vol. 100, No. 9.
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abstract = "The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.",
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Rauch, C, Tuomisto, F, Vilalta-Clemente, A, Lacroix, B, Ruterana, P, Kraeusel, S, Hourahine, B & Schaff, WJ 2012, 'Defect evolution and interplay in n-type InN' Applied Physics Letters, vol. 100, no. 9, 091907. https://doi.org/10.1063/1.3688038

Defect evolution and interplay in n-type InN. / Rauch, Christian; Tuomisto, Filip; Vilalta-Clemente, Arantxa; Lacroix, Bertrand; Ruterana, Pierre; Kraeusel, Simon; Hourahine, Benjamin; Schaff, William J.

In: Applied Physics Letters, Vol. 100, No. 9, 091907, 27.02.2012.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Defect evolution and interplay in n-type InN

AU - Rauch, Christian

AU - Tuomisto, Filip

AU - Vilalta-Clemente, Arantxa

AU - Lacroix, Bertrand

AU - Ruterana, Pierre

AU - Kraeusel, Simon

AU - Hourahine, Benjamin

AU - Schaff, William J.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

AB - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

KW - defect evolution

KW - n-type InN

KW - dislocation densities

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.3688038

DO - 10.1063/1.3688038

M3 - Letter

VL - 100

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 091907

ER -

Rauch C, Tuomisto F, Vilalta-Clemente A, Lacroix B, Ruterana P, Kraeusel S et al. Defect evolution and interplay in n-type InN. Applied Physics Letters. 2012 Feb 27;100(9). 091907. https://doi.org/10.1063/1.3688038