Defect evolution and interplay in n-type InN

Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente, Bertrand Lacroix, Pierre Ruterana, Simon Kraeusel, Benjamin Hourahine, William J. Schaff

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Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
Original languageEnglish
Article number091907
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27 Feb 2012

Keywords

  • defect evolution
  • n-type InN
  • dislocation densities

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    Rauch, C., Tuomisto, F., Vilalta-Clemente, A., Lacroix, B., Ruterana, P., Kraeusel, S., ... Schaff, W. J. (2012). Defect evolution and interplay in n-type InN. Applied Physics Letters, 100(9), [091907]. https://doi.org/10.1063/1.3688038