Defect evolution and interplay in n-type InN

Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente, Bertrand Lacroix, Pierre Ruterana, Simon Kraeusel, Benjamin Hourahine, William J. Schaff

Research output: Contribution to journalLetter

6 Citations (Scopus)

Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
Original languageEnglish
Article number091907
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27 Feb 2012

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defects
positron annihilation
point defects
sublattices
buffers
transmission electron microscopy
spectroscopy

Keywords

  • defect evolution
  • n-type InN
  • dislocation densities

Cite this

Rauch, C., Tuomisto, F., Vilalta-Clemente, A., Lacroix, B., Ruterana, P., Kraeusel, S., ... Schaff, W. J. (2012). Defect evolution and interplay in n-type InN. Applied Physics Letters, 100(9), [091907]. https://doi.org/10.1063/1.3688038
Rauch, Christian ; Tuomisto, Filip ; Vilalta-Clemente, Arantxa ; Lacroix, Bertrand ; Ruterana, Pierre ; Kraeusel, Simon ; Hourahine, Benjamin ; Schaff, William J. / Defect evolution and interplay in n-type InN. In: Applied Physics Letters. 2012 ; Vol. 100, No. 9.
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abstract = "The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.",
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Rauch, C, Tuomisto, F, Vilalta-Clemente, A, Lacroix, B, Ruterana, P, Kraeusel, S, Hourahine, B & Schaff, WJ 2012, 'Defect evolution and interplay in n-type InN', Applied Physics Letters, vol. 100, no. 9, 091907. https://doi.org/10.1063/1.3688038

Defect evolution and interplay in n-type InN. / Rauch, Christian; Tuomisto, Filip; Vilalta-Clemente, Arantxa; Lacroix, Bertrand; Ruterana, Pierre; Kraeusel, Simon; Hourahine, Benjamin; Schaff, William J.

In: Applied Physics Letters, Vol. 100, No. 9, 091907, 27.02.2012.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Defect evolution and interplay in n-type InN

AU - Rauch, Christian

AU - Tuomisto, Filip

AU - Vilalta-Clemente, Arantxa

AU - Lacroix, Bertrand

AU - Ruterana, Pierre

AU - Kraeusel, Simon

AU - Hourahine, Benjamin

AU - Schaff, William J.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

AB - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

KW - defect evolution

KW - n-type InN

KW - dislocation densities

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.3688038

DO - 10.1063/1.3688038

M3 - Letter

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 091907

ER -

Rauch C, Tuomisto F, Vilalta-Clemente A, Lacroix B, Ruterana P, Kraeusel S et al. Defect evolution and interplay in n-type InN. Applied Physics Letters. 2012 Feb 27;100(9). 091907. https://doi.org/10.1063/1.3688038