Defect evolution and interplay in n-type InN

Christian Rauch; Filip Tuomisto; Arantxa Vilalta-Clemente; Bertrand Lacroix; Pierre Ruterana; Simon Kraeusel; Benjamin Hourahine; William J. Schaff

doi:10.1063/1.3688038

Defect evolution and interplay in n-type InN

Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente, Bertrand Lacroix, Pierre Ruterana, Simon Kraeusel, Benjamin Hourahine, William J. Schaff

Research output: Contribution to journal › Letter › peer-review

11 Citations (Scopus)

Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

Original language	English
Article number	091907
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3688038
Publication status	Published - 27 Feb 2012

Keywords

defect evolution
n-type InN
dislocation densities

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title = "Defect evolution and interplay in n-type InN",

abstract = "The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.",

keywords = "defect evolution, n-type InN , dislocation densities",

author = "Christian Rauch and Filip Tuomisto and Arantxa Vilalta-Clemente and Bertrand Lacroix and Pierre Ruterana and Simon Kraeusel and Benjamin Hourahine and Schaff, {William J.}",

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T1 - Defect evolution and interplay in n-type InN

AU - Rauch, Christian

AU - Tuomisto, Filip

AU - Vilalta-Clemente, Arantxa

AU - Lacroix, Bertrand

AU - Ruterana, Pierre

AU - Kraeusel, Simon

AU - Hourahine, Benjamin

AU - Schaff, William J.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

AB - The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

KW - defect evolution

KW - n-type InN

KW - dislocation densities

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.3688038

DO - 10.1063/1.3688038

M3 - Letter

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091907

ER -

Defect evolution and interplay in n-type InN

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Keywords

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