Deep UV micro-LED arrays for optical communications

Xiangyu He, Enyuan Xie, Mohamed Sufyan Islim, Ardimas Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas, Martin D. Dawson

Research output: Contribution to conferencePaper

Abstract

Deep ultraviolet (UV) optical communications have attracted considerable attention recently. As most of the Sun's ultraviolet radiation is absorbed by the ozone layer in Earth's stratosphere, UV optical communications offer not only a high-security communication link between satellites in the upper atmosphere, but also data transmission with low solar background noise for outdoor communication on the ground. Furthermore, deep UV light is strongly scattered in the air caused by abundant molecules and aerosols, which enables non-line-of-sight short-range optical communication. However, in comparison with visible light communications, the data transmission rate based on deep UV light emitting diodes (LEDs) has been little explored and is still quite low. This is mainly due to the low modulation speed of conventional deep UV-LEDs. Therefore, developing high speed deep UV-LEDs is of paramount importance.
In recent years, we have developed the micro-LEDs (µLEDs) as novel high-speed transmitters for visible light communications.1 These µLEDs, of edge dimension/diameter typically in the 10-100µm range, have extremely high modulation bandwidths due to their high operating current densities. Based on these studies, we report here the first III-nitride deep UV-µLED array emitting at around 262 nm to demonstrate its full potential for deep UV optical communications. This array consists of 15 µLED elements with a flip-chip configuration. With an emission area of 565.5 µm2, each µLED element is individually addressable. The UV optical power of a single µLED element is 196 µW at 3.4 kA/cm2 direct-current (DC) operating current density. We are currently measuring the modulation bandwidth of these deep UV-µLEDs. As they can sustain such a high DC operating current density, we expect a high modulation bandwidth and, in turn, a high data transmission rate for fast free-space optical communication. These results will be presented in the conference.

Conference

ConferenceInternational Conference on UV LED Technologies & Applications Conference (ICULTA-2018)
CountryGermany
CityBerlin
Period22/04/1825/04/18

Fingerprint

Optical communication
ultraviolet radiation
Light emitting diodes
optical communication
light emitting diodes
data transmission
Modulation
Data communication systems
modulation
Upper atmosphere
Current density
current density
bandwidth
Bandwidth
direct current
communication
high speed
Ozone layer
ozonosphere
free-space optical communication

Keywords

  • deep ultraviolet
  • UV
  • optical communications
  • data transmission
  • satellite communications
  • micro-LEDs

Cite this

He, X., Xie, E., Islim, M. S., Purwita, A., McKendry, J. J. D., Gu, E., ... Dawson, M. D. (2018). Deep UV micro-LED arrays for optical communications. Paper presented at International Conference on UV LED Technologies & Applications Conference (ICULTA-2018), Berlin, Germany.
He, Xiangyu ; Xie, Enyuan ; Islim, Mohamed Sufyan ; Purwita, Ardimas ; McKendry, Jonathan J. D. ; Gu, Erdan ; Haas, Harald ; Dawson, Martin D. / Deep UV micro-LED arrays for optical communications. Paper presented at International Conference on UV LED Technologies & Applications Conference (ICULTA-2018), Berlin, Germany.
@conference{96767eac8033485b9a89b5c418b98ca2,
title = "Deep UV micro-LED arrays for optical communications",
abstract = "Deep ultraviolet (UV) optical communications have attracted considerable attention recently. As most of the Sun's ultraviolet radiation is absorbed by the ozone layer in Earth's stratosphere, UV optical communications offer not only a high-security communication link between satellites in the upper atmosphere, but also data transmission with low solar background noise for outdoor communication on the ground. Furthermore, deep UV light is strongly scattered in the air caused by abundant molecules and aerosols, which enables non-line-of-sight short-range optical communication. However, in comparison with visible light communications, the data transmission rate based on deep UV light emitting diodes (LEDs) has been little explored and is still quite low. This is mainly due to the low modulation speed of conventional deep UV-LEDs. Therefore, developing high speed deep UV-LEDs is of paramount importance.In recent years, we have developed the micro-LEDs (µLEDs) as novel high-speed transmitters for visible light communications.1 These µLEDs, of edge dimension/diameter typically in the 10-100µm range, have extremely high modulation bandwidths due to their high operating current densities. Based on these studies, we report here the first III-nitride deep UV-µLED array emitting at around 262 nm to demonstrate its full potential for deep UV optical communications. This array consists of 15 µLED elements with a flip-chip configuration. With an emission area of 565.5 µm2, each µLED element is individually addressable. The UV optical power of a single µLED element is 196 µW at 3.4 kA/cm2 direct-current (DC) operating current density. We are currently measuring the modulation bandwidth of these deep UV-µLEDs. As they can sustain such a high DC operating current density, we expect a high modulation bandwidth and, in turn, a high data transmission rate for fast free-space optical communication. These results will be presented in the conference.",
keywords = "deep ultraviolet, UV, optical communications, data transmission, satellite communications, micro-LEDs",
author = "Xiangyu He and Enyuan Xie and Islim, {Mohamed Sufyan} and Ardimas Purwita and McKendry, {Jonathan J. D.} and Erdan Gu and Harald Haas and Dawson, {Martin D.}",
year = "2018",
month = "4",
day = "24",
language = "English",
note = "International Conference on UV LED Technologies & Applications Conference (ICULTA-2018) ; Conference date: 22-04-2018 Through 25-04-2018",

}

He, X, Xie, E, Islim, MS, Purwita, A, McKendry, JJD, Gu, E, Haas, H & Dawson, MD 2018, 'Deep UV micro-LED arrays for optical communications' Paper presented at International Conference on UV LED Technologies & Applications Conference (ICULTA-2018), Berlin, Germany, 22/04/18 - 25/04/18, .

Deep UV micro-LED arrays for optical communications. / He, Xiangyu; Xie, Enyuan; Islim, Mohamed Sufyan; Purwita, Ardimas; McKendry, Jonathan J. D.; Gu, Erdan; Haas, Harald; Dawson, Martin D.

2018. Paper presented at International Conference on UV LED Technologies & Applications Conference (ICULTA-2018), Berlin, Germany.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Deep UV micro-LED arrays for optical communications

AU - He, Xiangyu

AU - Xie, Enyuan

AU - Islim, Mohamed Sufyan

AU - Purwita, Ardimas

AU - McKendry, Jonathan J. D.

AU - Gu, Erdan

AU - Haas, Harald

AU - Dawson, Martin D.

PY - 2018/4/24

Y1 - 2018/4/24

N2 - Deep ultraviolet (UV) optical communications have attracted considerable attention recently. As most of the Sun's ultraviolet radiation is absorbed by the ozone layer in Earth's stratosphere, UV optical communications offer not only a high-security communication link between satellites in the upper atmosphere, but also data transmission with low solar background noise for outdoor communication on the ground. Furthermore, deep UV light is strongly scattered in the air caused by abundant molecules and aerosols, which enables non-line-of-sight short-range optical communication. However, in comparison with visible light communications, the data transmission rate based on deep UV light emitting diodes (LEDs) has been little explored and is still quite low. This is mainly due to the low modulation speed of conventional deep UV-LEDs. Therefore, developing high speed deep UV-LEDs is of paramount importance.In recent years, we have developed the micro-LEDs (µLEDs) as novel high-speed transmitters for visible light communications.1 These µLEDs, of edge dimension/diameter typically in the 10-100µm range, have extremely high modulation bandwidths due to their high operating current densities. Based on these studies, we report here the first III-nitride deep UV-µLED array emitting at around 262 nm to demonstrate its full potential for deep UV optical communications. This array consists of 15 µLED elements with a flip-chip configuration. With an emission area of 565.5 µm2, each µLED element is individually addressable. The UV optical power of a single µLED element is 196 µW at 3.4 kA/cm2 direct-current (DC) operating current density. We are currently measuring the modulation bandwidth of these deep UV-µLEDs. As they can sustain such a high DC operating current density, we expect a high modulation bandwidth and, in turn, a high data transmission rate for fast free-space optical communication. These results will be presented in the conference.

AB - Deep ultraviolet (UV) optical communications have attracted considerable attention recently. As most of the Sun's ultraviolet radiation is absorbed by the ozone layer in Earth's stratosphere, UV optical communications offer not only a high-security communication link between satellites in the upper atmosphere, but also data transmission with low solar background noise for outdoor communication on the ground. Furthermore, deep UV light is strongly scattered in the air caused by abundant molecules and aerosols, which enables non-line-of-sight short-range optical communication. However, in comparison with visible light communications, the data transmission rate based on deep UV light emitting diodes (LEDs) has been little explored and is still quite low. This is mainly due to the low modulation speed of conventional deep UV-LEDs. Therefore, developing high speed deep UV-LEDs is of paramount importance.In recent years, we have developed the micro-LEDs (µLEDs) as novel high-speed transmitters for visible light communications.1 These µLEDs, of edge dimension/diameter typically in the 10-100µm range, have extremely high modulation bandwidths due to their high operating current densities. Based on these studies, we report here the first III-nitride deep UV-µLED array emitting at around 262 nm to demonstrate its full potential for deep UV optical communications. This array consists of 15 µLED elements with a flip-chip configuration. With an emission area of 565.5 µm2, each µLED element is individually addressable. The UV optical power of a single µLED element is 196 µW at 3.4 kA/cm2 direct-current (DC) operating current density. We are currently measuring the modulation bandwidth of these deep UV-µLEDs. As they can sustain such a high DC operating current density, we expect a high modulation bandwidth and, in turn, a high data transmission rate for fast free-space optical communication. These results will be presented in the conference.

KW - deep ultraviolet

KW - UV

KW - optical communications

KW - data transmission

KW - satellite communications

KW - micro-LEDs

M3 - Paper

ER -

He X, Xie E, Islim MS, Purwita A, McKendry JJD, Gu E et al. Deep UV micro-LED arrays for optical communications. 2018. Paper presented at International Conference on UV LED Technologies & Applications Conference (ICULTA-2018), Berlin, Germany.