DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil

Helena Gleskova, Sigurd Wagner

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

We investigated the electrical stability of a-Si:H TFTs with mobilities of ∼0.7 cm 2/Vs fabricated on 51 μm thick polyimide foil at 150°C. Positive gate voltage V g ranging from 20 to 80 V was used in the bias stress experiments conducted at room temperature. The bias stressing caused an increase in threshold voltage and subthreshold slope, and minor decrease in mobility. Annealing in forming gas substantially improved the stability of the TFTs. The threshold voltage shift exhibited a power law time dependence with the exponent γ depending on the gate bais V g. For V g = 20 V, γ = 0.45, while for V g = 80 V, γ = 0.27. The threshold voltage shift also exhibited a power law dependence on V g with the exponent β depending slightly on stress duration. β = 2.1 for t = 100 sec and 1.7 for t - 5000 s. These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350°C.

LanguageEnglish
Pages1667-1671
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume48
Issue number8
DOIs
Publication statusPublished - 1 Aug 2001

Fingerprint

Threshold voltage
Polyimides
Metal foil
Gases
Annealing
Temperature
Electric potential
Experiments

Keywords

  • amorphous semiconductors
  • elemental semiconductors
  • hydrogen plasma
  • thin film transistors
  • electrical engineering

Cite this

@article{dbb75e7fb2254656be05fe2e49b19f25,
title = "DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil",
abstract = "We investigated the electrical stability of a-Si:H TFTs with mobilities of ∼0.7 cm 2/Vs fabricated on 51 μm thick polyimide foil at 150°C. Positive gate voltage V g ranging from 20 to 80 V was used in the bias stress experiments conducted at room temperature. The bias stressing caused an increase in threshold voltage and subthreshold slope, and minor decrease in mobility. Annealing in forming gas substantially improved the stability of the TFTs. The threshold voltage shift exhibited a power law time dependence with the exponent γ depending on the gate bais V g. For V g = 20 V, γ = 0.45, while for V g = 80 V, γ = 0.27. The threshold voltage shift also exhibited a power law dependence on V g with the exponent β depending slightly on stress duration. β = 2.1 for t = 100 sec and 1.7 for t - 5000 s. These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350°C.",
keywords = "amorphous semiconductors, elemental semiconductors, hydrogen plasma, thin film transistors, electrical engineering",
author = "Helena Gleskova and Sigurd Wagner",
year = "2001",
month = "8",
day = "1",
doi = "10.1109/16.936588",
language = "English",
volume = "48",
pages = "1667--1671",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "8",

}

DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil. / Gleskova, Helena; Wagner, Sigurd .

In: IEEE Transactions on Electron Devices, Vol. 48, No. 8, 01.08.2001, p. 1667-1671.

Research output: Contribution to journalArticle

TY - JOUR

T1 - DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil

AU - Gleskova, Helena

AU - Wagner, Sigurd

PY - 2001/8/1

Y1 - 2001/8/1

N2 - We investigated the electrical stability of a-Si:H TFTs with mobilities of ∼0.7 cm 2/Vs fabricated on 51 μm thick polyimide foil at 150°C. Positive gate voltage V g ranging from 20 to 80 V was used in the bias stress experiments conducted at room temperature. The bias stressing caused an increase in threshold voltage and subthreshold slope, and minor decrease in mobility. Annealing in forming gas substantially improved the stability of the TFTs. The threshold voltage shift exhibited a power law time dependence with the exponent γ depending on the gate bais V g. For V g = 20 V, γ = 0.45, while for V g = 80 V, γ = 0.27. The threshold voltage shift also exhibited a power law dependence on V g with the exponent β depending slightly on stress duration. β = 2.1 for t = 100 sec and 1.7 for t - 5000 s. These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350°C.

AB - We investigated the electrical stability of a-Si:H TFTs with mobilities of ∼0.7 cm 2/Vs fabricated on 51 μm thick polyimide foil at 150°C. Positive gate voltage V g ranging from 20 to 80 V was used in the bias stress experiments conducted at room temperature. The bias stressing caused an increase in threshold voltage and subthreshold slope, and minor decrease in mobility. Annealing in forming gas substantially improved the stability of the TFTs. The threshold voltage shift exhibited a power law time dependence with the exponent γ depending on the gate bais V g. For V g = 20 V, γ = 0.45, while for V g = 80 V, γ = 0.27. The threshold voltage shift also exhibited a power law dependence on V g with the exponent β depending slightly on stress duration. β = 2.1 for t = 100 sec and 1.7 for t - 5000 s. These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350°C.

KW - amorphous semiconductors

KW - elemental semiconductors

KW - hydrogen plasma

KW - thin film transistors

KW - electrical engineering

UR - http://www.scopus.com/inward/record.url?scp=0035424162&partnerID=8YFLogxK

U2 - 10.1109/16.936588

DO - 10.1109/16.936588

M3 - Article

VL - 48

SP - 1667

EP - 1671

JO - IEEE Transactions on Electron Devices

T2 - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -