Crystalfield symmetries of luminescent Eu³⁺ centers in GaN: the importance of the ⁵D₀ to ⁷F₁ transition

Eu-doped GaN is a promising material with potential application not only in optoelectronics but also in magneto-optical and quantum optical devices ‘beyond the light emitting diode’. Its interesting spectroscopy is unfortunately complicated by spectral overlaps due to ‘site multiplicity’, the existence in a given sample of multiple composite centers in which Eu ions associate with intrinsic or extrinsic defects. We show here that elementary crystalfield analysis of the ⁵D₀ to ⁷F₁ transition can critically distinguish such sites. Hence, we find that the center involved in the hysteretic photochromic switching (HPS) observed in GaN(Mg):Eu, proposed as the basis of a new solid state qubit material, is not in fact Eu1, as previously reported, but a related defect, Eu1(Mg). Furthermore, the decomposition of the crystalfield distortions of Eu0, Eu1(Mg) and Eu1 into axial and non-axial components strongly suggests reasonable microscopic models for the defects themselves.