Cryogenic temperature performance of heavily irradiated silicon detectors

C da Via; W. H. Bell; L. Casagrande; V. Granata; V. G. Palmieri

doi:10.1016/S0168-9002(99)00444-1

Cryogenic temperature performance of heavily irradiated silicon detectors

C da Via, W. H. Bell, L. Casagrande, V. Granata, V. G. Palmieri

Computer And Information Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2x10^14 n/cm2 is 100% at a bias voltage of 50 V. For 2x10^15 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	434
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(99)00444-1
Publication status	Published - 11 Sept 1999

Keywords

silicon detectors
CCE
cryogenic temperatures

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10.1016/S0168-9002(99)00444-1

Cite this

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title = "Cryogenic temperature performance of heavily irradiated silicon detectors",

abstract = "The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2x10^14 n/cm2 is 100% at a bias voltage of 50 V. For 2x10^15 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.",

keywords = "silicon detectors, CCE, cryogenic temperatures",

author = "{da Via}, C and Bell, {W. H.} and L. Casagrande and V. Granata and Palmieri, {V. G.}",

year = "1999",

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doi = "10.1016/S0168-9002(99)00444-1",

language = "English",

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pages = "114--117",

journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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TY - JOUR

T1 - Cryogenic temperature performance of heavily irradiated silicon detectors

AU - da Via, C

AU - Bell, W. H.

AU - Casagrande, L.

AU - Granata, V.

AU - Palmieri, V. G.

PY - 1999/9/11

Y1 - 1999/9/11

N2 - The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2x10^14 n/cm2 is 100% at a bias voltage of 50 V. For 2x10^15 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

AB - The charge collection efficiency (CCE) of silicon detectors, previously irradiated with high neutron fluences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2x10^14 n/cm2 is 100% at a bias voltage of 50 V. For 2x10^15 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligible difference has been observed between 77 and 4.2 K operation, while no recovery was measurable at 195 K. The timing of the signal was measured to be better than 5 ns. The samples were irradiated and stored at room temperature and cooled only when operated. Reproducible results were obtained after several weeks and several thermal cycles.

KW - silicon detectors

KW - CCE

KW - cryogenic temperatures

U2 - 10.1016/S0168-9002(99)00444-1

DO - 10.1016/S0168-9002(99)00444-1

M3 - Article

SN - 0168-9002

VL - 434

SP - 114

EP - 117

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Cryogenic temperature performance of heavily irradiated silicon detectors

Abstract

Keywords

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