Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Nils A.K. Kaufmann, L. Lahourcade, B. Hourahine, D. Martin, N. Grandjean

Research output: Contribution to journalArticle

35 Citations (Scopus)
193 Downloads (Pure)

Abstract

We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.
Original languageEnglish
Pages (from-to)36-42
Number of pages7
JournalJournal of Crystal Growth
Volume433
Early online date24 Jun 2015
DOIs
Publication statusPublished - 1 Jan 2016

Keywords

  • growth models
  • metalorganic chemical vapor deposition
  • molecular beam epitaxy
  • nitrides
  • semiconducting gallium compounds
  • surface structure

Fingerprint Dive into the research topics of 'Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth'. Together they form a unique fingerprint.

  • Cite this