Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Nils A.K. Kaufmann; L. Lahourcade; B. Hourahine; D. Martin; N. Grandjean

doi:10.1016/j.jcrysgro.2015.06.013

Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Nils A.K. Kaufmann, L. Lahourcade, B. Hourahine, D. Martin, N. Grandjean

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Abstract

We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.

Original language	English
Pages (from-to)	36-42
Number of pages	7
Journal	Journal of Crystal Growth
Volume	433
Early online date	24 Jun 2015
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.06.013
Publication status	Published - 1 Jan 2016

Keywords

growth models
metalorganic chemical vapor deposition
molecular beam epitaxy
nitrides
semiconducting gallium compounds
surface structure

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10.1016/j.jcrysgro.2015.06.013

Kaufmann-etal-JCG-2015-Critical-impact-of-Erlich-Schwobel-barrier-on-GaN-surfaceAccepted author manuscript, 1.16 MBLicence: CC BY-NC-ND 4.0
1-s2.0-S0022024815004467-mainAccepted author manuscript, 2.46 MBLicence: CC BY-NC-ND 4.0

Ben Hourahine
- benjamin.hourahinestrath.acuk
- Physics - Senior Lecturer
- SUPA
- Measurement, Digital and Enabling Technologies
Person: Academic

Cite this

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title = "Critical impact of Ehrlich-Schw{\"o}bel barrier on GaN surface morphology during homoepitaxial growth",

abstract = "We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schw{\"o}bel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.",

keywords = "growth models, metalorganic chemical vapor deposition, molecular beam epitaxy, nitrides, semiconducting gallium compounds, surface structure",

author = "Kaufmann, {Nils A.K.} and L. Lahourcade and B. Hourahine and D. Martin and N. Grandjean",

year = "2016",

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doi = "10.1016/j.jcrysgro.2015.06.013",

language = "English",

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pages = "36--42",

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T1 - Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

AU - Kaufmann, Nils A.K.

AU - Lahourcade, L.

AU - Hourahine, B.

AU - Martin, D.

AU - Grandjean, N.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.

AB - We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.

KW - growth models

KW - metalorganic chemical vapor deposition

KW - molecular beam epitaxy

KW - nitrides

KW - semiconducting gallium compounds

KW - surface structure

U2 - 10.1016/j.jcrysgro.2015.06.013

DO - 10.1016/j.jcrysgro.2015.06.013

M3 - Article

SN - 0022-0248

VL - 433

SP - 36

EP - 42

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

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Ben Hourahine

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