We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.
- growth models
- metalorganic chemical vapor deposition
- molecular beam epitaxy
- semiconducting gallium compounds
- surface structure
Kaufmann, N. A. K., Lahourcade, L., Hourahine, B., Martin, D., & Grandjean, N. (2016). Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth. Journal of Crystal Growth, 433, 36-42. https://doi.org/10.1016/j.jcrysgro.2015.06.013