Coulomb interaction and valley-orbit coupling in Si quantum dots

Luyao Jiang, C. H. Yang, Zhaodi Pan, Alessandro Rossi, Andrew S. Dzurak, Dimitrie Culcer

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2≤N≤4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N=4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

Original languageEnglish
Article number085311
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number8
DOIs
Publication statusPublished - 12 Aug 2013

Keywords

  • Si quantum dots
  • silicon
  • quantum dots

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