Coulomb interaction and valley-orbit coupling in Si quantum dots

Luyao Jiang, C. H. Yang, Zhaodi Pan, Alessandro Rossi, Andrew S. Dzurak, Dimitrie Culcer

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2≤N≤4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N=4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

LanguageEnglish
Article number085311
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number8
DOIs
Publication statusPublished - 12 Aug 2013

Fingerprint

Coulomb interactions
Semiconductor quantum dots
valleys
Orbits
quantum dots
orbits
Electrons
Electron-electron interactions
occupation
interactions
electrons
Metals
Magnetic fields
metal oxide semiconductors
electron scattering
energy spectra
interference
magnetic fields

Keywords

  • Si quantum dots
  • silicon
  • quantum dots

Cite this

Jiang, Luyao ; Yang, C. H. ; Pan, Zhaodi ; Rossi, Alessandro ; Dzurak, Andrew S. ; Culcer, Dimitrie. / Coulomb interaction and valley-orbit coupling in Si quantum dots. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 88, No. 8.
@article{f839c77fafea4980a992f699736679b0,
title = "Coulomb interaction and valley-orbit coupling in Si quantum dots",
abstract = "The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2≤N≤4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N=4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.",
keywords = "Si quantum dots, silicon, quantum dots",
author = "Luyao Jiang and Yang, {C. H.} and Zhaodi Pan and Alessandro Rossi and Dzurak, {Andrew S.} and Dimitrie Culcer",
year = "2013",
month = "8",
day = "12",
doi = "10.1103/PhysRevB.88.085311",
language = "English",
volume = "88",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
number = "8",

}

Coulomb interaction and valley-orbit coupling in Si quantum dots. / Jiang, Luyao; Yang, C. H.; Pan, Zhaodi; Rossi, Alessandro; Dzurak, Andrew S.; Culcer, Dimitrie.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 8, 085311, 12.08.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Coulomb interaction and valley-orbit coupling in Si quantum dots

AU - Jiang, Luyao

AU - Yang, C. H.

AU - Pan, Zhaodi

AU - Rossi, Alessandro

AU - Dzurak, Andrew S.

AU - Culcer, Dimitrie

PY - 2013/8/12

Y1 - 2013/8/12

N2 - The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2≤N≤4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N=4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

AB - The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2≤N≤4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N=4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

KW - Si quantum dots

KW - silicon

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=84884516505&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.085311

DO - 10.1103/PhysRevB.88.085311

M3 - Article

VL - 88

JO - Physical Review B: Condensed Matter and Materials Physics

T2 - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 8

M1 - 085311

ER -