Abstract
Language  English 

Article number  079501 
Number of pages  1 
Journal  Semiconductor Science and Technology 
Volume  33 
Early online date  21 May 2018 
DOIs 

State  Published  6 Jun 2018 
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Keywords
 cathodoluminescence
 semiconductors
Cite this
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Corrigendum : Cathodoluminescence nanocharacterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005). / Edwards, Paul R; Martin, Robert W.
In: Semiconductor Science and Technology, Vol. 33, 079501, 06.06.2018.Research output: Contribution to journal › Comment/debate
TY  JOUR
T1  Corrigendum
T2  Semiconductor Science and Technology
AU  Edwards,Paul R
AU  Martin,Robert W
N1  This corrigendum to the 2011 article https://doi.org/10.1088/02681242/26/6/064005
PY  2018/6/6
Y1  2018/6/6
N2  In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone halfangle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the lowangle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.
AB  In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone halfangle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the lowangle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.
KW  cathodoluminescence
KW  semiconductors
UR  https://strathprints.strath.ac.uk/30546/
U2  10.1088/13616641/aac678
DO  10.1088/13616641/aac678
M3  Comment/debate
VL  33
JO  Semiconductor Science and Technology
JF  Semiconductor Science and Technology
SN  02681242
M1  079501
ER 