Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)

Paul R Edwards; Robert W Martin

doi:10.1088/1361-6641/aac678

Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)

Paul R Edwards, Robert W Martin

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Abstract

In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone half-angle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the low-angle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.

Original language	English
Article number	079501
Number of pages	1
Journal	Semiconductor Science and Technology
Volume	33
Early online date	21 May 2018
DOIs	https://doi.org/10.1088/1361-6641/aac678
Publication status	Published - 6 Jun 2018

Keywords

cathodoluminescence
semiconductors

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10.1088/1361-6641/aac678

Edwards-Martin-SST-2018-Corrigendum-cathodoluminescence-nano-characterization-of-semiconductorsAccepted author manuscript, 49.5 KB

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title = "Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)",

abstract = "In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone half-angle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the low-angle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.",

keywords = "cathodoluminescence, semiconductors",

author = "Edwards, {Paul R} and Martin, {Robert W}",

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T2 - Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)

AU - Edwards, Paul R

AU - Martin, Robert W

N1 - This corrigendum to the 2011 article https://doi.org/10.1088/0268-1242/26/6/064005

PY - 2018/6/6

Y1 - 2018/6/6

N2 - In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone half-angle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the low-angle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.

AB - In our original paper, we estimated the maximum field of view (FOV) that would result when collecting luminescence over a cone half-angle u and coupling this into a spectrograph with a given f /number and a slit width d. Due to the use of the low-angle approximation outwith the paraxial regime, the expression given in Equation 2 used the tangent of the angle rather than the correct sine function.

KW - cathodoluminescence

KW - semiconductors

UR - https://strathprints.strath.ac.uk/30546/

U2 - 10.1088/1361-6641/aac678

DO - 10.1088/1361-6641/aac678

M3 - Comment/debate

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

M1 - 079501

ER -

Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)

Abstract

Keywords

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Gallium nitride enabled hybrid and flexible photonics

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Cathodoluminescence nano-characterization of semiconductors

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Corrigendum: Cathodoluminescence nano-characterization of semiconductors (2011 Semicond. Sci. Technol. 26 064005)

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Gallium nitride enabled hybrid and flexible photonics

Lighting the future

Ultra Energy Efficient III-nitride/polymer hybrid white light-emitting-diodes using nanotechnology

Research output

Cathodoluminescence nano-characterization of semiconductors

Cite this