Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene

Research output: Contribution to conferencePoster

Abstract

Alkyl phosphonic acids (CnPA) are becoming a material of choice for passivation of high-k oxides in organic thin-film transistors with ultra-thin gate dielectrics. A monolayer of phosphonic acid inserted between the inorganic oxide and the organic semiconductor provides two main benefits: (i) the density of the charge carrier traps associated with the surface –OH groups of the oxide is reduced because these groups act as binding sites for the organic molecules; and (ii) the low surface energy of the organic monolayer may reduce the density of defects in the subsequently deposited conjugated polymer. To date such monolayers have been assembled from solutions only. We have recently developed a vapour-phase self-assembly of n-octylphosphonic acid (C8PA) monolayer in vacuum that leads to a well chemisorbed monolayer of C8PA. When such a monolayer is attached to ~ 9-nm thick aluminium oxide to form an ultra-thin dielectric implemented in low-voltage organic thin-film transistors based on pentacene, the transistor performance exhibits measurable changes upon alteration of the structure of the C8PA monolayer.

Conference

ConferenceOrganics, Photonics and Electronics: Faraday Discussion 174
CountryUnited Kingdom
CityGlasgow
Period8/09/1410/09/14

Fingerprint

Monolayers
Transistors
Electric potential
Oxides
Thin film transistors
Acids
Phosphorous Acids
Semiconducting organic compounds
Aluminum Oxide
Gate dielectrics
Conjugated polymers
Binding sites
pentacene
Charge carriers
Interfacial energy
Passivation
Self assembly
Binding Sites
Vapors
Vacuum

Keywords

  • Alkyl phosphonic acids
  • dielectric monolayer
  • low-voltage transistors
  • pentacene
  • organic thin-film transistors

Cite this

Gupta, S., Hannah, S., & Gleskova, H. (2014). Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene. Poster session presented at Organics, Photonics and Electronics: Faraday Discussion 174, Glasgow, United Kingdom. https://doi.org/10.1039/C4FD90074J
Gupta, Swati ; Hannah, Stuart ; Gleskova, Helena. / Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene. Poster session presented at Organics, Photonics and Electronics: Faraday Discussion 174, Glasgow, United Kingdom.
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keywords = "Alkyl phosphonic acids, dielectric monolayer, low-voltage transistors, pentacene, organic thin-film transistors",
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note = "Organics, Photonics and Electronics: Faraday Discussion 174 ; Conference date: 08-09-2014 Through 10-09-2014",

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Gupta, S, Hannah, S & Gleskova, H 2014, 'Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene' Organics, Photonics and Electronics: Faraday Discussion 174, Glasgow, United Kingdom, 8/09/14 - 10/09/14, . https://doi.org/10.1039/C4FD90074J

Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene. / Gupta, Swati; Hannah, Stuart; Gleskova, Helena.

2014. Poster session presented at Organics, Photonics and Electronics: Faraday Discussion 174, Glasgow, United Kingdom.

Research output: Contribution to conferencePoster

TY - CONF

T1 - Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene

AU - Gupta, Swati

AU - Hannah, Stuart

AU - Gleskova, Helena

PY - 2014/9/8

Y1 - 2014/9/8

N2 - Alkyl phosphonic acids (CnPA) are becoming a material of choice for passivation of high-k oxides in organic thin-film transistors with ultra-thin gate dielectrics. A monolayer of phosphonic acid inserted between the inorganic oxide and the organic semiconductor provides two main benefits: (i) the density of the charge carrier traps associated with the surface –OH groups of the oxide is reduced because these groups act as binding sites for the organic molecules; and (ii) the low surface energy of the organic monolayer may reduce the density of defects in the subsequently deposited conjugated polymer. To date such monolayers have been assembled from solutions only. We have recently developed a vapour-phase self-assembly of n-octylphosphonic acid (C8PA) monolayer in vacuum that leads to a well chemisorbed monolayer of C8PA. When such a monolayer is attached to ~ 9-nm thick aluminium oxide to form an ultra-thin dielectric implemented in low-voltage organic thin-film transistors based on pentacene, the transistor performance exhibits measurable changes upon alteration of the structure of the C8PA monolayer.

AB - Alkyl phosphonic acids (CnPA) are becoming a material of choice for passivation of high-k oxides in organic thin-film transistors with ultra-thin gate dielectrics. A monolayer of phosphonic acid inserted between the inorganic oxide and the organic semiconductor provides two main benefits: (i) the density of the charge carrier traps associated with the surface –OH groups of the oxide is reduced because these groups act as binding sites for the organic molecules; and (ii) the low surface energy of the organic monolayer may reduce the density of defects in the subsequently deposited conjugated polymer. To date such monolayers have been assembled from solutions only. We have recently developed a vapour-phase self-assembly of n-octylphosphonic acid (C8PA) monolayer in vacuum that leads to a well chemisorbed monolayer of C8PA. When such a monolayer is attached to ~ 9-nm thick aluminium oxide to form an ultra-thin dielectric implemented in low-voltage organic thin-film transistors based on pentacene, the transistor performance exhibits measurable changes upon alteration of the structure of the C8PA monolayer.

KW - Alkyl phosphonic acids

KW - dielectric monolayer

KW - low-voltage transistors

KW - pentacene

KW - organic thin-film transistors

UR - http://pubs.rsc.org/en/journals/journalissues/fd#!issueid=fd014174

U2 - 10.1039/C4FD90074J

DO - 10.1039/C4FD90074J

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Gupta S, Hannah S, Gleskova H. Correlation between the structure of the dielectric monolayer and the performance of low-voltage transistors based on pentacene. 2014. Poster session presented at Organics, Photonics and Electronics: Faraday Discussion 174, Glasgow, United Kingdom. https://doi.org/10.1039/C4FD90074J