Correlating composition and luminescence in AlInGaN epilayers

Paul Edwards, R.W. Martin, K. Bejtka, K.P. O'Donnell, S. Fernandez-Garrido, E. Calleja

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epilayers of the quaternary alloy AlxInyGa1−x−yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples.
LanguageEnglish
Pages151-155
Number of pages4
JournalSuperlattices and Microstructures
Volume45
Issue number4-5
DOIs
Publication statusPublished - Apr 2009

Fingerprint

Epilayers
Luminescence
luminescence
Wavelength
Cathodoluminescence
Aluminum Oxide
Growth temperature
Chemical analysis
Molecular beam epitaxy
Sapphire
statistical correlation
quaternary alloys
Metals
cathodoluminescence
Plasmas
Imaging techniques
wavelengths
X rays
sapphire
molecular beam epitaxy

Keywords

  • AlInGaN
  • GaN
  • MBE
  • cathodoluminescence
  • WDX

Cite this

Edwards, Paul ; Martin, R.W. ; Bejtka, K. ; O'Donnell, K.P. ; Fernandez-Garrido, S. ; Calleja, E. / Correlating composition and luminescence in AlInGaN epilayers. In: Superlattices and Microstructures. 2009 ; Vol. 45, No. 4-5. pp. 151-155.
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Correlating composition and luminescence in AlInGaN epilayers. / Edwards, Paul; Martin, R.W.; Bejtka, K.; O'Donnell, K.P.; Fernandez-Garrido, S.; Calleja, E.

In: Superlattices and Microstructures, Vol. 45, No. 4-5, 04.2009, p. 151-155.

Research output: Contribution to journalArticle

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T1 - Correlating composition and luminescence in AlInGaN epilayers

AU - Edwards, Paul

AU - Martin, R.W.

AU - Bejtka, K.

AU - O'Donnell, K.P.

AU - Fernandez-Garrido, S.

AU - Calleja, E.

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AB - Epilayers of the quaternary alloy AlxInyGa1−x−yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples.

KW - AlInGaN

KW - GaN

KW - MBE

KW - cathodoluminescence

KW - WDX

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