Abstract
To increase the efficiency of renewable energy power conversion systems, traditional silicon IGBTs can be replaced with silicon super-junction MOSFETs. However, the poor performance of the MOSFET's intrinsic diode and the output capacitance present difficulties in voltage source converter bridge-legs. When a MOSFET in this circuit turns on, a charging current has to be sourced into the output capacitance of the complementary freewheeling MOSFET, even if the diode has been deactivated. The peak incoming drain current into the MOSFET turning on can be limited by using a large resistance in series with its gate. However, this increases MOSFET power dissipation. Also, the turn-on propagation delay time is increased. This paper presents a gate driver circuit for profiling the MOSFET's incoming drain current to provide an improved trade-off between incoming peak current, turn-on power dissipation, and delay time.
Original language | English |
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Title of host publication | 2020 9th International Conference on Renewable Energy Research and Application (ICRERA) |
Place of Publication | Piscataway, N.J. |
Publisher | IEEE |
Pages | 93-100 |
Number of pages | 8 |
ISBN (Electronic) | 978-1-7281-7369-6 |
DOIs | |
Publication status | Published - 2 Nov 2020 |
Event | 9th IEEE International Conference on Renewable Energy Research and Applications (ICRERA) 2020 - Glasgow, United Kingdom Duration: 27 Sept 2020 → 30 Sept 2020 https://icrera.org/archieve2020/index.php?id=main |
Conference
Conference | 9th IEEE International Conference on Renewable Energy Research and Applications (ICRERA) 2020 |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 27/09/20 → 30/09/20 |
Internet address |
Keywords
- control
- converter
- current transformer
- gate driver
- MOSFET
- super-junction