Control of incoming drain currents drawn by super-junction MOSFETs in voltage source bridge-legs

Zhengyang Feng, Neville McNeill, Barry Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)
15 Downloads (Pure)

Abstract

To increase the efficiency of renewable energy power conversion systems, traditional silicon IGBTs can be replaced with silicon super-junction MOSFETs. However, the poor performance of the MOSFET's intrinsic diode and the output capacitance present difficulties in voltage source converter bridge-legs. When a MOSFET in this circuit turns on, a charging current has to be sourced into the output capacitance of the complementary freewheeling MOSFET, even if the diode has been deactivated. The peak incoming drain current into the MOSFET turning on can be limited by using a large resistance in series with its gate. However, this increases MOSFET power dissipation. Also, the turn-on propagation delay time is increased. This paper presents a gate driver circuit for profiling the MOSFET's incoming drain current to provide an improved trade-off between incoming peak current, turn-on power dissipation, and delay time.
Original languageEnglish
Title of host publication2020 9th International Conference on Renewable Energy Research and Application (ICRERA)
Place of PublicationPiscataway, N.J.
PublisherIEEE
Pages93-100
Number of pages8
ISBN (Electronic)978-1-7281-7369-6
DOIs
Publication statusPublished - 2 Nov 2020
Event 9th IEEE International Conference on Renewable Energy Research and Applications (ICRERA) 2020 - Glasgow, United Kingdom
Duration: 27 Sept 202030 Sept 2020
https://icrera.org/archieve2020/index.php?id=main

Conference

Conference 9th IEEE International Conference on Renewable Energy Research and Applications (ICRERA) 2020
Country/TerritoryUnited Kingdom
CityGlasgow
Period27/09/2030/09/20
Internet address

Keywords

  • control
  • converter
  • current transformer
  • gate driver
  • MOSFET
  • super-junction

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