Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek; R. Leyman; D. Carnegie; N. Bazieva; G. Erbert; S. Schulz; C. Reardon; S. Reynolds; E. U. Rafailov

doi:10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. U. Rafailov

Institute Of Photonics

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Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive
device switching at the signals’ difference frequency ~1 THz.

Original language	English
Article number	081114
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	8
Early online date	23 Aug 2012
DOIs	https://doi.org/10.1063/1.4747724
Publication status	Published - 23 Aug 2012

Keywords

terahertz radiation
quantum dots
terahertz radiation sources

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10.1063/1.4747724

Kruczek-etal-APL-2012-Continuous-wave-terahertz-radiation-from-an-InAs-GaAs-quantumFinal published version, 738 KB

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title = "Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device",

abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals{\textquoteright} difference frequency ~1 THz.",

keywords = "terahertz radiation, quantum dots, terahertz radiation sources",

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AU - Kruczek, T.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Erbert, G.

AU - Schulz, S.

AU - Reardon, C.

AU - Reynolds, S.

AU - Rafailov, E. U.

PY - 2012/8/23

Y1 - 2012/8/23

N2 - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals’ difference frequency ~1 THz.

AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals’ difference frequency ~1 THz.

KW - terahertz radiation

KW - quantum dots

KW - terahertz radiation sources

U2 - 10.1063/1.4747724

DO - 10.1063/1.4747724

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 081114

ER -

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Abstract

Keywords

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