Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. U. Rafailov

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive
device switching at the signals’ difference frequency ~1 THz.
LanguageEnglish
Article number081114
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number8
Early online date23 Aug 2012
DOIs
Publication statusPublished - 23 Aug 2012

Fingerprint

continuous radiation
electromagnetic radiation
quantum dots
optical communication
trapping
wavelengths

Keywords

  • terahertz radiation
  • quantum dots
  • terahertz radiation sources

Cite this

Kruczek, T., Leyman, R., Carnegie, D., Bazieva, N., Erbert, G., Schulz, S., ... Rafailov, E. U. (2012). Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101(8), [081114]. https://doi.org/10.1063/1.4747724
Kruczek, T. ; Leyman, R. ; Carnegie, D. ; Bazieva, N. ; Erbert, G. ; Schulz, S. ; Reardon, C. ; Reynolds, S. ; Rafailov, E. U. / Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. In: Applied Physics Letters. 2012 ; Vol. 101, No. 8.
@article{30b9a205c7c2462984a4e738941881bd,
title = "Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device",
abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals’ difference frequency ~1 THz.",
keywords = "terahertz radiation, quantum dots, terahertz radiation sources",
author = "T. Kruczek and R. Leyman and D. Carnegie and N. Bazieva and G. Erbert and S. Schulz and C. Reardon and S. Reynolds and Rafailov, {E. U.}",
year = "2012",
month = "8",
day = "23",
doi = "10.1063/1.4747724",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "8",

}

Kruczek, T, Leyman, R, Carnegie, D, Bazieva, N, Erbert, G, Schulz, S, Reardon, C, Reynolds, S & Rafailov, EU 2012, 'Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device' Applied Physics Letters, vol. 101, no. 8, 081114. https://doi.org/10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. / Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E. U.

In: Applied Physics Letters, Vol. 101, No. 8, 081114, 23.08.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

AU - Kruczek, T.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Erbert, G.

AU - Schulz, S.

AU - Reardon, C.

AU - Reynolds, S.

AU - Rafailov, E. U.

PY - 2012/8/23

Y1 - 2012/8/23

N2 - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals’ difference frequency ~1 THz.

AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductivedevice switching at the signals’ difference frequency ~1 THz.

KW - terahertz radiation

KW - quantum dots

KW - terahertz radiation sources

U2 - 10.1063/1.4747724

DO - 10.1063/1.4747724

M3 - Article

VL - 101

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 081114

ER -

Kruczek T, Leyman R, Carnegie D, Bazieva N, Erbert G, Schulz S et al. Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters. 2012 Aug 23;101(8). 081114. https://doi.org/10.1063/1.4747724