Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. U. Rafailov

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Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive
device switching at the signals’ difference frequency ~1 THz.
Original languageEnglish
Article number081114
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number8
Early online date23 Aug 2012
DOIs
Publication statusPublished - 23 Aug 2012

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Keywords

  • terahertz radiation
  • quantum dots
  • terahertz radiation sources

Cite this

Kruczek, T., Leyman, R., Carnegie, D., Bazieva, N., Erbert, G., Schulz, S., ... Rafailov, E. U. (2012). Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101(8), [081114]. https://doi.org/10.1063/1.4747724