Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Daniele Carmine Parrotta, Walter Lubeigt, Alan Kemp, David Burns, Martin Dawson, Jennifer Hastie

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)
80 Downloads (Pure)


A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.
Original languageEnglish
Pages (from-to)1083-1085
Number of pages3
JournalOptics Letters
Issue number7
Early online date18 Mar 2011
Publication statusPublished - 1 Apr 2011


  • all-solid-state
  • intractivity
  • crystal
  • heatspreader
  • generation
  • power
  • continuous-wave raman
  • laser pumped
  • semiconductor disk laser


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