Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Daniele Carmine Parrotta, Walter Lubeigt, Alan Kemp, David Burns, Martin Dawson, Jennifer Hastie

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.
LanguageEnglish
Pages1083-1085
Number of pages3
JournalOptics Letters
Volume36
Issue number7
Early online date18 Mar 2011
DOIs
Publication statusPublished - 1 Apr 2011

Fingerprint

Raman lasers
continuous wave lasers
laser cavities
diodes
tuning
pumps
laser outputs
lasers
cavities
thresholds
output

Keywords

  • all-solid-state
  • intractivity
  • crystal
  • heatspreader
  • generation
  • power
  • continuous-wave raman
  • laser pumped
  • semiconductor disk laser

Cite this

Parrotta, Daniele Carmine ; Lubeigt, Walter ; Kemp, Alan ; Burns, David ; Dawson, Martin ; Hastie, Jennifer. / Continuous-wave Raman laser pumped within a semiconductor disk laser cavity. In: Optics Letters. 2011 ; Vol. 36, No. 7. pp. 1083-1085.
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Continuous-wave Raman laser pumped within a semiconductor disk laser cavity. / Parrotta, Daniele Carmine; Lubeigt, Walter; Kemp, Alan; Burns, David; Dawson, Martin; Hastie, Jennifer.

In: Optics Letters, Vol. 36, No. 7, 01.04.2011, p. 1083-1085.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

AU - Parrotta, Daniele Carmine

AU - Lubeigt, Walter

AU - Kemp, Alan

AU - Burns, David

AU - Dawson, Martin

AU - Hastie, Jennifer

PY - 2011/4/1

Y1 - 2011/4/1

N2 - A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

AB - A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

KW - all-solid-state

KW - intractivity

KW - crystal

KW - heatspreader

KW - generation

KW - power

KW - continuous-wave raman

KW - laser pumped

KW - semiconductor disk laser

U2 - 10.1364/OL.36.001083

DO - 10.1364/OL.36.001083

M3 - Article

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EP - 1085

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T2 - Optics Letters

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SN - 0146-9592

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