Abstract
This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter ß.
| Original language | English |
|---|---|
| Pages (from-to) | 711-713 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 7 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2 Dec 1971 |
Keywords
- Gunn diodes
- electrical contacts
- semiconductor device testing
- quantitative measure of contact quality