Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

Martin Shaw, K.M. Yu, M. Ting, R. E. L. Powell, W. L. Sarney, S. P. Svensson, A. J. Kent, W. Walukiewicz, C. T. Foxon, S. V. Novikov, Robert W. Martin

Research output: Contribution to journalArticle

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Abstract

In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.
LanguageEnglish
Article number465102
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume47
Issue number46
DOIs
Publication statusPublished - 29 Oct 2014

Fingerprint

Molecular beam epitaxy
Optical properties
Fluxes
optical properties
solar energy conversion
Cathodoluminescence
Rutherford backscattering spectroscopy
Microanalysis
cathodoluminescence
Chemical analysis
microanalysis
Energy conversion
Solar energy
Luminescence
backscattering
Photoluminescence
luminescence
photoluminescence
X rays
Wavelength

Keywords

  • dilute-Sb GaN1 − xSbx alloys
  • solar energy conversion devices
  • Highly Mismatched Alloys (HMAs)
  • semiconductor alloys

Cite this

Shaw, Martin ; Yu, K.M. ; Ting, M. ; Powell, R. E. L. ; Sarney, W. L. ; Svensson, S. P. ; Kent, A. J. ; Walukiewicz, W. ; Foxon, C. T. ; Novikov, S. V. ; Martin, Robert W. / Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. In: Journal of Physics D: Applied Physics. 2014 ; Vol. 47, No. 46.
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abstract = "In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.",
keywords = "dilute-Sb GaN1 − xSbx alloys, solar energy conversion devices, Highly Mismatched Alloys (HMAs), semiconductor alloys",
author = "Martin Shaw and K.M. Yu and M. Ting and Powell, {R. E. L.} and Sarney, {W. L.} and Svensson, {S. P.} and Kent, {A. J.} and W. Walukiewicz and Foxon, {C. T.} and Novikov, {S. V.} and Martin, {Robert W.}",
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Shaw, M, Yu, KM, Ting, M, Powell, REL, Sarney, WL, Svensson, SP, Kent, AJ, Walukiewicz, W, Foxon, CT, Novikov, SV & Martin, RW 2014, 'Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE' Journal of Physics D: Applied Physics, vol. 47, no. 46, 465102. https://doi.org/10.1088/0022-3727/47/46/465102

Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. / Shaw, Martin; Yu, K.M.; Ting, M.; Powell, R. E. L.; Sarney, W. L.; Svensson, S. P.; Kent, A. J.; Walukiewicz, W.; Foxon, C. T.; Novikov, S. V.; Martin, Robert W.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 46, 465102, 29.10.2014.

Research output: Contribution to journalArticle

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T1 - Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

AU - Shaw, Martin

AU - Yu, K.M.

AU - Ting, M.

AU - Powell, R. E. L.

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Kent, A. J.

AU - Walukiewicz, W.

AU - Foxon, C. T.

AU - Novikov, S. V.

AU - Martin, Robert W.

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N2 - In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.

AB - In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.

KW - dilute-Sb GaN1 − xSbx alloys

KW - solar energy conversion devices

KW - Highly Mismatched Alloys (HMAs)

KW - semiconductor alloys

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