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In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.
- dilute-Sb GaN1 − xSbx alloys
- solar energy conversion devices
- Highly Mismatched Alloys (HMAs)
- semiconductor alloys
Shaw, M., Yu, K. M., Ting, M., Powell, R. E. L., Sarney, W. L., Svensson, S. P., Kent, A. J., Walukiewicz, W., Foxon, C. T., Novikov, S. V., & Martin, R. W. (2014). Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. Journal of Physics D: Applied Physics, 47(46), . https://doi.org/10.1088/0022-3727/47/46/465102