Abstract
| Language | English |
|---|---|
| Article number | 465102 |
| Number of pages | 7 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 47 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - 29 Oct 2014 |
Fingerprint
Keywords
- dilute-Sb GaN1 − xSbx alloys
- solar energy conversion devices
- Highly Mismatched Alloys (HMAs)
- semiconductor alloys
Cite this
}
Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE. / Shaw, Martin; Yu, K.M.; Ting, M.; Powell, R. E. L.; Sarney, W. L.; Svensson, S. P.; Kent, A. J.; Walukiewicz, W.; Foxon, C. T.; Novikov, S. V.; Martin, Robert W.
In: Journal of Physics D: Applied Physics, Vol. 47, No. 46, 465102, 29.10.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE
AU - Shaw, Martin
AU - Yu, K.M.
AU - Ting, M.
AU - Powell, R. E. L.
AU - Sarney, W. L.
AU - Svensson, S. P.
AU - Kent, A. J.
AU - Walukiewicz, W.
AU - Foxon, C. T.
AU - Novikov, S. V.
AU - Martin, Robert W.
PY - 2014/10/29
Y1 - 2014/10/29
N2 - In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.
AB - In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.
KW - dilute-Sb GaN1 − xSbx alloys
KW - solar energy conversion devices
KW - Highly Mismatched Alloys (HMAs)
KW - semiconductor alloys
UR - http://iopscience.iop.org/0022-3727
U2 - 10.1088/0022-3727/47/46/465102
DO - 10.1088/0022-3727/47/46/465102
M3 - Article
VL - 47
JO - Journal of Physics D: Applied Physics
T2 - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 46
M1 - 465102
ER -