Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

K. Bejtka, P.R. Edwards, R.W. Martin, S. Fernandez-Garrido, E. Calleja

Research output: Contribution to journalArticle

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Abstract

A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.
LanguageEnglish
Article number073537
Number of pages6
JournalJournal of Applied Physics
Volume104
Issue number7
DOIs
Publication statusPublished - 1 Oct 2008

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molecular beam epitaxy
luminescence
cathodoluminescence
microanalysis
light emission
temperature
photoluminescence
spectroscopy
x rays
energy

Keywords

  • AlInGaN epilayers
  • plasma-assisted molecular beam epitaxy

Cite this

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title = "Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy",
abstract = "A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4{\%}-30{\%} and 0{\%}-16{\%}, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.",
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Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy. / Bejtka, K.; Edwards, P.R.; Martin, R.W.; Fernandez-Garrido, S.; Calleja, E.

In: Journal of Applied Physics, Vol. 104, No. 7, 073537, 01.10.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

AU - Bejtka, K.

AU - Edwards, P.R.

AU - Martin, R.W.

AU - Fernandez-Garrido, S.

AU - Calleja, E.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

AB - A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.

KW - AlInGaN epilayers

KW - plasma-assisted molecular beam epitaxy

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