Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

Jie Lin; Antonio Llopis; Alexi Krokhin; S. Pereira; Ian Watson; A. Neogi

doi:10.1063/1.4884075

Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

Jie Lin, Antonio Llopis, Alexi Krokhin, S. Pereira, Ian Watson, A. Neogi

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Abstract

The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

Original language	English
Article number	242106
Number of pages	4
Journal	Applied Physics Letters
Volume	104
Issue number	24
Early online date	18 Jun 2014
DOIs	https://doi.org/10.1063/1.4884075
Publication status	Published - 2014

Keywords

gold
multiple quantum wells
III-V semiconductors
nanoparticles

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10.1063/1.4884075

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@article{61aebfffcc8c48f4b4579a2ca2739b19,

title = "Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells",

abstract = "The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.",

keywords = "gold, multiple quantum wells, III-V semiconductors, nanoparticles",

author = "Jie Lin and Antonio Llopis and Alexi Krokhin and S. Pereira and Ian Watson and A. Neogi",

year = "2014",

doi = "10.1063/1.4884075",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

AU - Lin, Jie

AU - Llopis, Antonio

AU - Krokhin, Alexi

AU - Pereira, S.

AU - Watson, Ian

AU - Neogi, A.

PY - 2014

Y1 - 2014

N2 - The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

AB - The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

KW - gold

KW - multiple quantum wells

KW - III-V semiconductors

KW - nanoparticles

UR - http://scitation.aip.org/content/aip/journal/apl

U2 - 10.1063/1.4884075

DO - 10.1063/1.4884075

M3 - Article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242106

ER -

Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

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