Comparison of dark and light-induced annealing of metastable defects in a-Si:H

Helena Gleskova, M. Nakata, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H
LanguageEnglish
Title of host publicationAmorphous silicon technology - 1994
Subtitle of host publicationvolume 336 - MRS proceedings
EditorsM. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of PublicationWarrendale, PA
Pages245-250
Number of pages6
Volume336
Publication statusPublished - 4 Nov 1994
EventMRS Spring Meeting 1994 - San Francisco, United States
Duration: 4 Apr 19948 Apr 1994

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume336

Conference

ConferenceMRS Spring Meeting 1994
CountryUnited States
CitySan Francisco
Period4/04/948/04/94

Fingerprint

annealing
defects

Keywords

  • comparison
  • dark
  • light-induced annealing
  • metastable defects
  • a-Si:H

Cite this

Gleskova, H., Nakata, M., & Wagner, S. (1994). Comparison of dark and light-induced annealing of metastable defects in a-Si:H. In M. Hack, A. Madan, A. Matsuda, M. Powell, & E. A. Schiff (Eds.), Amorphous silicon technology - 1994: volume 336 - MRS proceedings (Vol. 336, pp. 245-250). (MRS Symposium Proceedings; Vol. 336). Warrendale, PA.
Gleskova, Helena ; Nakata, M. ; Wagner, S. / Comparison of dark and light-induced annealing of metastable defects in a-Si:H. Amorphous silicon technology - 1994: volume 336 - MRS proceedings. editor / M. Hack ; A. Madan ; A. Matsuda ; M. Powell ; E. A. Schiff. Vol. 336 Warrendale, PA, 1994. pp. 245-250 (MRS Symposium Proceedings).
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Gleskova, H, Nakata, M & Wagner, S 1994, Comparison of dark and light-induced annealing of metastable defects in a-Si:H. in M Hack, A Madan, A Matsuda, M Powell & EA Schiff (eds), Amorphous silicon technology - 1994: volume 336 - MRS proceedings. vol. 336, MRS Symposium Proceedings, vol. 336, Warrendale, PA, pp. 245-250, MRS Spring Meeting 1994, San Francisco, United States, 4/04/94.

Comparison of dark and light-induced annealing of metastable defects in a-Si:H. / Gleskova, Helena; Nakata, M.; Wagner, S.

Amorphous silicon technology - 1994: volume 336 - MRS proceedings. ed. / M. Hack; A. Madan; A. Matsuda; M. Powell; E. A. Schiff. Vol. 336 Warrendale, PA, 1994. p. 245-250 (MRS Symposium Proceedings; Vol. 336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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Gleskova H, Nakata M, Wagner S. Comparison of dark and light-induced annealing of metastable defects in a-Si:H. In Hack M, Madan A, Matsuda A, Powell M, Schiff EA, editors, Amorphous silicon technology - 1994: volume 336 - MRS proceedings. Vol. 336. Warrendale, PA. 1994. p. 245-250. (MRS Symposium Proceedings).