Comparison of dark and light-induced annealing of metastable defects in a-Si:H

Helena Gleskova; M. Nakata; S. Wagner

Comparison of dark and light-induced annealing of metastable defects in a-Si:H

Helena Gleskova, M. Nakata, S. Wagner

Electronic And Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H

Original language	English
Title of host publication	Amorphous silicon technology - 1994
Subtitle of host publication	volume 336 - MRS proceedings
Editors	M. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of Publication	Warrendale, PA
Pages	245-250
Number of pages	6
Volume	336
Publication status	Published - 4 Nov 1994
Event	MRS Spring Meeting 1994 - San Francisco, United States Duration: 4 Apr 1994 → 8 Apr 1994

Publication series

Name	MRS Symposium Proceedings
Publisher	Materials Research Society
Volume	336

Conference

Conference	MRS Spring Meeting 1994
Country/Territory	United States
City	San Francisco
Period	4/04/94 → 8/04/94

Keywords

comparison
dark
light-induced annealing
metastable defects
a-Si:H

Cite this

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title = "Comparison of dark and light-induced annealing of metastable defects in a-Si:H",

abstract = "This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H",

keywords = "comparison, dark, light-induced annealing , metastable defects, a-Si:H",

author = "Helena Gleskova and M. Nakata and S. Wagner",

year = "1994",

month = nov,

day = "4",

language = "English",

isbn = "9781558992368",

volume = "336",

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publisher = "Materials Research Society",

pages = "245--250",

editor = "M. Hack and A. Madan and A. Matsuda and M. Powell and Schiff, {E. A.}",

booktitle = "Amorphous silicon technology - 1994",

note = "MRS Spring Meeting 1994 ; Conference date: 04-04-1994 Through 08-04-1994",

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Gleskova, H, Nakata, M & Wagner, S 1994, Comparison of dark and light-induced annealing of metastable defects in a-Si:H. in M Hack, A Madan, A Matsuda, M Powell & EA Schiff (eds), Amorphous silicon technology - 1994: volume 336 - MRS proceedings. vol. 336, MRS Symposium Proceedings, vol. 336, Warrendale, PA, pp. 245-250, MRS Spring Meeting 1994, San Francisco, United States, 4/04/94.

Comparison of dark and light-induced annealing of metastable defects in a-Si:H. / Gleskova, Helena; Nakata, M.; Wagner, S.
Amorphous silicon technology - 1994: volume 336 - MRS proceedings. ed. / M. Hack; A. Madan; A. Matsuda; M. Powell; E. A. Schiff. Vol. 336 Warrendale, PA, 1994. p. 245-250 (MRS Symposium Proceedings; Vol. 336).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Comparison of dark and light-induced annealing of metastable defects in a-Si:H

AU - Gleskova, Helena

AU - Nakata, M.

AU - Wagner, S.

PY - 1994/11/4

Y1 - 1994/11/4

N2 - This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H

AB - This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H

KW - comparison

KW - dark

KW - light-induced annealing

KW - metastable defects

KW - a-Si:H

M3 - Conference contribution book

SN - 9781558992368

VL - 336

T3 - MRS Symposium Proceedings

SP - 245

EP - 250

BT - Amorphous silicon technology - 1994

A2 - Hack, M.

A2 - Madan, A.

A2 - Matsuda, A.

A2 - Powell, M.

A2 - Schiff, E. A.

CY - Warrendale, PA

T2 - MRS Spring Meeting 1994

Y2 - 4 April 1994 through 8 April 1994

ER -

Comparison of dark and light-induced annealing of metastable defects in a-Si:H

Abstract

Publication series

Conference

Keywords

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Cite this