Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

T Quinn, R Bates, M Bruzzi, W Cunningham, K Mathieson, M Moll, T Nelson, HE Nilsson, I Pintillie, L Reynolds, S Sciortino, P Sellin, H Strachan, BG Svensson, J Vaitkus, M Rahman

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

7 Citations (Scopus)

Abstract

Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 1014 hardrons/cm2. Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 1016/cm2 as required by future particle physics experiments.
Original languageEnglish
Title of host publication2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5
EditorsSD Metzler
PublisherIEEE
Pages1028-1033
Number of pages6
DOIs
Publication statusPublished - 2004

Publication series

NameIEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD

Keywords

  • radiation hard particle tracking
  • epitaxial 4H-SiC detectors

Cite this

Quinn, T., Bates, R., Bruzzi, M., Cunningham, W., Mathieson, K., Moll, M., Nelson, T., Nilsson, HE., Pintillie, I., Reynolds, L., Sciortino, S., Sellin, P., Strachan, H., Svensson, BG., Vaitkus, J., & Rahman, M. (2004). Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking. In SD. Metzler (Ed.), 2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5 (pp. 1028-1033). (IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD). IEEE. https://doi.org/10.1109/NSSMIC.2003.1351868