Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

T Quinn; R Bates; M Bruzzi; W Cunningham; K Mathieson; M Moll; T Nelson; HE Nilsson; I Pintillie; L Reynolds; S Sciortino; P Sellin; H Strachan; BG Svensson; J Vaitkus; M Rahman

doi:10.1109/NSSMIC.2003.1351868

Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

T Quinn, R Bates, M Bruzzi, W Cunningham, K Mathieson, M Moll, T Nelson, HE Nilsson, I Pintillie, L Reynolds, S Sciortino, P Sellin, H Strachan, BG Svensson, J Vaitkus, M Rahman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

9 Citations (Scopus)

Abstract

Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 1014 hardrons/cm2. Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 1016/cm2 as required by future particle physics experiments.

Original language	English
Title of host publication	2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5
Editors	SD Metzler
Publisher	IEEE
Pages	1028-1033
Number of pages	6
DOIs	https://doi.org/10.1109/NSSMIC.2003.1351868
Publication status	Published - 2004

Publication series

Name	IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD

Keywords

radiation hard particle tracking
epitaxial 4H-SiC detectors

Access to Document

10.1109/NSSMIC.2003.1351868

Cite this

Quinn, T., Bates, R., Bruzzi, M., Cunningham, W., Mathieson, K., Moll, M., Nelson, T., Nilsson, HE., Pintillie, I., Reynolds, L., Sciortino, S., Sellin, P., Strachan, H., Svensson, BG., Vaitkus, J., & Rahman, M. (2004). Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking. In SD. Metzler (Ed.), 2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5 (pp. 1028-1033). (IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD). IEEE. https://doi.org/10.1109/NSSMIC.2003.1351868

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title = "Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking",

abstract = "Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 1014 hardrons/cm2. Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 1016/cm2 as required by future particle physics experiments.",

keywords = "radiation hard particle tracking , epitaxial 4H-SiC detectors",

author = "T Quinn and R Bates and M Bruzzi and W Cunningham and K Mathieson and M Moll and T Nelson and HE Nilsson and I Pintillie and L Reynolds and S Sciortino and P Sellin and H Strachan and BG Svensson and J Vaitkus and M Rahman",

note = "IEEE Nuclear Science Symposium/Medical Imaging Conference, Portland, OR, OCT 19-25, 2003",

year = "2004",

doi = "10.1109/NSSMIC.2003.1351868",

language = "English",

series = "IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD",

publisher = "IEEE",

pages = "1028--1033",

editor = "SD Metzler",

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Quinn, T, Bates, R, Bruzzi, M, Cunningham, W, Mathieson, K, Moll, M, Nelson, T, Nilsson, HE, Pintillie, I, Reynolds, L, Sciortino, S, Sellin, P, Strachan, H, Svensson, BG, Vaitkus, J & Rahman, M 2004, Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking. in SD Metzler (ed.), 2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5. IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, IEEE, pp. 1028-1033. https://doi.org/10.1109/NSSMIC.2003.1351868

Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking. / Quinn, T; Bates, R; Bruzzi, M et al.
2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5. ed. / SD Metzler. IEEE, 2004. p. 1028-1033 (IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

AU - Quinn, T

AU - Bates, R

AU - Bruzzi, M

AU - Cunningham, W

AU - Mathieson, K

AU - Moll, M

AU - Nelson, T

AU - Nilsson, HE

AU - Pintillie, I

AU - Reynolds, L

AU - Sciortino, S

AU - Sellin, P

AU - Strachan, H

AU - Svensson, BG

AU - Vaitkus, J

AU - Rahman, M

N1 - IEEE Nuclear Science Symposium/Medical Imaging Conference, Portland, OR, OCT 19-25, 2003

PY - 2004

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N2 - Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 1014 hardrons/cm2. Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 1016/cm2 as required by future particle physics experiments.

AB - Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 1014 hardrons/cm2. Material of thickness 40μm gave a charge collection efficiency of 100% dropping to around 60% at 100 μm thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 1016/cm2 as required by future particle physics experiments.

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KW - epitaxial 4H-SiC detectors

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ER -

Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

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