Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

A. Vantomme, M. F. Wu, S. Hogg, G. Langouche, K. Jacobs, I. Moerman, M. E. White, K. P. O'Donnell, L. Nistor, J. Van Landuyt, H. Bender

Research output: Contribution to journalConference articlepeer-review


Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Original languageEnglish
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1 Jan 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 28 Nov 19993 Dec 1999


  • semiconducting indium compounds
  • composition
  • metallorganic chemical vapor deposition
  • photoluminescence
  • rutherford backscattering spectroscopy
  • transmission electron microscopy


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