Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

A. Vantomme, M. F. Wu, S. Hogg, G. Langouche, K. Jacobs, I. Moerman, M. E. White, K. P. O'Donnell, L. Nistor, J. Van Landuyt, H. Bender

Research output: Contribution to journalConference article

Abstract

Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

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Rutherford backscattering spectroscopy
Spectrometry
Structural properties
Photoluminescence
Indium
Transmission electron microscopy
photoluminescence
backscattering
spectroscopy
transmission electron microscopy
indium
Photoluminescence spectroscopy
Metallorganic chemical vapor deposition
Nitrides
nitrides
metalorganic chemical vapor deposition
Chemical analysis
matrices
energy

Keywords

  • semiconducting indium compounds
  • composition
  • metallorganic chemical vapor deposition
  • photoluminescence
  • rutherford backscattering spectroscopy
  • transmission electron microscopy

Cite this

Vantomme, A., Wu, M. F., Hogg, S., Langouche, G., Jacobs, K., Moerman, I., ... Bender, H. (2000). Comparative study of structural properties and photoluminescence in InGaN layers with a high In content. Materials Research Society Symposium - Proceedings, 595.
Vantomme, A. ; Wu, M. F. ; Hogg, S. ; Langouche, G. ; Jacobs, K. ; Moerman, I. ; White, M. E. ; O'Donnell, K. P. ; Nistor, L. ; Van Landuyt, J. ; Bender, H. / Comparative study of structural properties and photoluminescence in InGaN layers with a high In content. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 595.
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abstract = "Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40{\%}, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.",
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Vantomme, A, Wu, MF, Hogg, S, Langouche, G, Jacobs, K, Moerman, I, White, ME, O'Donnell, KP, Nistor, L, Van Landuyt, J & Bender, H 2000, 'Comparative study of structural properties and photoluminescence in InGaN layers with a high In content' Materials Research Society Symposium - Proceedings, vol. 595.

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content. / Vantomme, A.; Wu, M. F.; Hogg, S.; Langouche, G.; Jacobs, K.; Moerman, I.; White, M. E.; O'Donnell, K. P.; Nistor, L.; Van Landuyt, J.; Bender, H.

In: Materials Research Society Symposium - Proceedings, Vol. 595, 01.01.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

AU - Vantomme, A.

AU - Wu, M. F.

AU - Hogg, S.

AU - Langouche, G.

AU - Jacobs, K.

AU - Moerman, I.

AU - White, M. E.

AU - O'Donnell, K. P.

AU - Nistor, L.

AU - Van Landuyt, J.

AU - Bender, H.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

AB - Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

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