Compact semiconductor tapers for deep-to-shallow etch transitions

M.J. Strain; M. Sorel

doi:10.1109/LPT.2007.903886

Compact semiconductor tapers for deep-to-shallow etch transitions

M.J. Strain, M. Sorel

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

Original language	English
Pages (from-to)	1544-1546
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2007.903886
Publication status	Published - 1 Oct 2007

Keywords

photonics
integrated optics
optical waveguides
refractive index
shallow etched waveguides

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10.1109/LPT.2007.903886

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title = "Compact semiconductor tapers for deep-to-shallow etch transitions",

abstract = "Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05\%.",

keywords = "photonics, integrated optics, optical waveguides , refractive index, shallow etched waveguides",

author = "M.J. Strain and M. Sorel",

year = "2007",

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T1 - Compact semiconductor tapers for deep-to-shallow etch transitions

AU - Strain, M.J.

AU - Sorel, M.

PY - 2007/10/1

Y1 - 2007/10/1

N2 - Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

AB - Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

KW - photonics

KW - integrated optics

KW - optical waveguides

KW - refractive index

KW - shallow etched waveguides

U2 - 10.1109/LPT.2007.903886

DO - 10.1109/LPT.2007.903886

M3 - Article

VL - 19

SP - 1544

EP - 1546

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Compact semiconductor tapers for deep-to-shallow etch transitions

Abstract

Keywords

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