Compact semiconductor tapers for deep-to-shallow etch transitions

M.J. Strain, M. Sorel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.
Original languageEnglish
Pages (from-to)1544-1546
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number19
DOIs
Publication statusPublished - 1 Oct 2007

Fingerprint

tapering
Semiconductor materials
Transfer matrix method
Waveguides
reflectance
matrix methods
converters
derivation
waveguides
profiles
simulation

Keywords

  • photonics
  • integrated optics
  • optical waveguides
  • refractive index
  • shallow etched waveguides

Cite this

@article{8b8c8da4498946288ccd94edf9590f6c,
title = "Compact semiconductor tapers for deep-to-shallow etch transitions",
abstract = "Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05{\%}.",
keywords = "photonics, integrated optics, optical waveguides , refractive index, shallow etched waveguides",
author = "M.J. Strain and M. Sorel",
year = "2007",
month = "10",
day = "1",
doi = "10.1109/LPT.2007.903886",
language = "English",
volume = "19",
pages = "1544--1546",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "19",

}

Compact semiconductor tapers for deep-to-shallow etch transitions. / Strain, M.J.; Sorel, M.

In: IEEE Photonics Technology Letters, Vol. 19, No. 19, 01.10.2007, p. 1544-1546.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Compact semiconductor tapers for deep-to-shallow etch transitions

AU - Strain, M.J.

AU - Sorel, M.

PY - 2007/10/1

Y1 - 2007/10/1

N2 - Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

AB - Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of <0.5 dB and reflectivities of <0.05%.

KW - photonics

KW - integrated optics

KW - optical waveguides

KW - refractive index

KW - shallow etched waveguides

U2 - 10.1109/LPT.2007.903886

DO - 10.1109/LPT.2007.903886

M3 - Article

VL - 19

SP - 1544

EP - 1546

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 19

ER -