Compact large-cross-section GaN directional couplers

Y. F. Zhang, L. McKnight, I. M. Watson, E. D. Gu, S. Calvez, M. D. Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

We report the design, fabrication and characterization of large-cross-section GaN waveguide directional couplers with mode-converting tapers. A positive RIE lag effect has been shown to significantly reduce overall device footprint.
Original languageEnglish
Title of host publicationProceedings of the 2011 IEEE Photonics Conference (PHO)
Place of PublicationNew York
PublisherIEEE
Pages407-408
Number of pages2
ISBN (Print)9781424489404
DOIs
Publication statusPublished - Oct 2011
Event24th Annual Meeting of the IEEE Photonics Society - Arlington, United States
Duration: 9 Oct 201113 Oct 2011

Conference

Conference24th Annual Meeting of the IEEE Photonics Society
CountryUnited States
CityArlington
Period9/10/1113/10/11

Keywords

  • plasma etching
  • GaN
  • directional coupler
  • RIE lag
  • waveguide
  • large-cross-section
  • GaN directional couplers
  • gallium compounds
  • wide band gap semiconductors
  • optical directional couplers

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