Abstract
We report the design, fabrication and characterization of large-cross-section GaN waveguide directional couplers with mode-converting tapers. A positive RIE lag effect has been shown to significantly reduce overall device footprint.
Original language | English |
---|---|
Title of host publication | Proceedings of the 2011 IEEE Photonics Conference (PHO) |
Place of Publication | New York |
Publisher | IEEE |
Pages | 407-408 |
Number of pages | 2 |
ISBN (Print) | 9781424489404 |
DOIs | |
Publication status | Published - Oct 2011 |
Event | 24th Annual Meeting of the IEEE Photonics Society - Arlington, United States Duration: 9 Oct 2011 → 13 Oct 2011 |
Conference
Conference | 24th Annual Meeting of the IEEE Photonics Society |
---|---|
Country/Territory | United States |
City | Arlington |
Period | 9/10/11 → 13/10/11 |
Keywords
- plasma etching
- GaN
- directional coupler
- RIE lag
- waveguide
- large-cross-section
- GaN directional couplers
- gallium compounds
- wide band gap semiconductors
- optical directional couplers