Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell; R. W. Martin; S. Pereira

doi:10.1063/1.1498003

Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell, R. W. Martin, S. Pereira

Physics

Research output: Contribution to journal › Comment/debate › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	1353-1354
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	7
DOIs	https://doi.org/10.1063/1.1498003
Publication status	Published - 12 Aug 2002

Keywords

semiconductor quantum wells
homogeneous InGaN epilayers

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10.1063/1.1498003

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title = "Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))",

keywords = "semiconductor quantum wells, homogeneous InGaN epilayers",

author = "O'Donnell, \{K. P.\} and Martin, \{R. W.\} and S. Pereira",

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T2 - Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Pereira, S.

PY - 2002/8/12

Y1 - 2002/8/12

KW - semiconductor quantum wells

KW - homogeneous InGaN epilayers

UR - https://www.scopus.com/pages/publications/79956028431

U2 - 10.1063/1.1498003

DO - 10.1063/1.1498003

M3 - Comment/debate

AN - SCOPUS:79956028431

SN - 0003-6951

VL - 81

SP - 1353

EP - 1354

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

Keywords

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