Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

Research output: Contribution to journalComment/debate

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)1353-1354
Number of pages2
JournalApplied Physics Letters
Volume81
Issue number7
DOIs
Publication statusPublished - 12 Aug 2002

Keywords

  • semiconductor quantum wells
  • homogeneous InGaN epilayers

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