| Language | English |
|---|---|
| Pages | 1353-1354 |
| Number of pages | 2 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 7 |
| DOIs |
|
| Publication status | Published - 12 Aug 2002 |
Keywords
- semiconductor quantum wells
- homogeneous InGaN epilayers
Cite this
@article{b48f4868b3244557bd5c812809939edc,
title = "Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))",
keywords = "semiconductor quantum wells, homogeneous InGaN epilayers",
author = "O'Donnell, {K. P.} and Martin, {R. W.} and S. Pereira",
year = "2002",
month = "8",
day = "12",
doi = "10.1063/1.1498003",
language = "English",
volume = "81",
pages = "1353--1354",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",
}
O'Donnell, KP, Martin, RW & Pereira, S 2002, 'Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))' Applied Physics Letters, vol. 81, no. 7, pp. 1353-1354. https://doi.org/10.1063/1.1498003
Comment on : Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550)). / O'Donnell, K. P.; Martin, R. W.; Pereira, S.
In: Applied Physics Letters, Vol. 81, No. 7, 12.08.2002, p. 1353-1354.Research output: Contribution to journal › Comment/debate
TY - JOUR
T1 - Comment on
T2 - Applied Physics Letters
AU - O'Donnell, K. P.
AU - Martin, R. W.
AU - Pereira, S.
PY - 2002/8/12
Y1 - 2002/8/12
KW - semiconductor quantum wells
KW - homogeneous InGaN epilayers
UR - http://www.scopus.com/inward/record.url?scp=79956028431&partnerID=8YFLogxK
U2 - 10.1063/1.1498003
DO - 10.1063/1.1498003
M3 - Comment/debate
VL - 81
SP - 1353
EP - 1354
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
ER -
O'Donnell KP, Martin RW, Pereira S. Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550)). Applied Physics Letters. 2002 Aug 12;81(7):1353-1354. https://doi.org/10.1063/1.1498003