Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell; R. W. Martin; S. Pereira

doi:10.1063/1.1498003

Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell, R. W. Martin, S. Pereira

Physics

Research output: Contribution to journal › Comment/debate › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	1353-1354
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	7
DOIs	https://doi.org/10.1063/1.1498003
Publication status	Published - 12 Aug 2002

Keywords

semiconductor quantum wells
homogeneous InGaN epilayers

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10.1063/1.1498003

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@article{b48f4868b3244557bd5c812809939edc,

title = "Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))",

keywords = "semiconductor quantum wells, homogeneous InGaN epilayers",

author = "O'Donnell, {K. P.} and Martin, {R. W.} and S. Pereira",

year = "2002",

month = aug,

day = "12",

doi = "10.1063/1.1498003",

language = "English",

volume = "81",

pages = "1353--1354",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "7",

}

TY - JOUR

T1 - Comment on

T2 - Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Pereira, S.

PY - 2002/8/12

Y1 - 2002/8/12

KW - semiconductor quantum wells

KW - homogeneous InGaN epilayers

UR - http://www.scopus.com/inward/record.url?scp=79956028431&partnerID=8YFLogxK

U2 - 10.1063/1.1498003

DO - 10.1063/1.1498003

M3 - Comment/debate

AN - SCOPUS:79956028431

VL - 81

SP - 1353

EP - 1354

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

Keywords

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