Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell; R. W. Martin; S. Pereira

doi:10.1063/1.1498003

Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

K. P. O'Donnell, R. W. Martin, S. Pereira

Physics

Research output: Contribution to journal › Comment/debate › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	1353-1354
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	7
DOIs	https://doi.org/10.1063/1.1498003
Publication status	Published - 12 Aug 2002

Keywords

semiconductor quantum wells
homogeneous InGaN epilayers

Access to Document

10.1063/1.1498003

Link to publication in Scopus

Cite this

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