Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))

Research output: Contribution to journalComment/debate

6 Citations (Scopus)
LanguageEnglish
Pages1353-1354
Number of pages2
JournalApplied Physics Letters
Volume81
Issue number7
DOIs
Publication statusPublished - 12 Aug 2002

Keywords

  • semiconductor quantum wells
  • homogeneous InGaN epilayers

Cite this

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title = "Comment on: Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550))",
keywords = "semiconductor quantum wells, homogeneous InGaN epilayers",
author = "O'Donnell, {K. P.} and Martin, {R. W.} and S. Pereira",
year = "2002",
month = "8",
day = "12",
doi = "10.1063/1.1498003",
language = "English",
volume = "81",
pages = "1353--1354",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",

}

Comment on : Low Stokes shift in thick and homogeneous InGaN epilayers(Appl. Phys. Lett. (2002) 80 550)). / O'Donnell, K. P.; Martin, R. W.; Pereira, S.

In: Applied Physics Letters, Vol. 81, No. 7, 12.08.2002, p. 1353-1354.

Research output: Contribution to journalComment/debate

TY - JOUR

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T2 - Applied Physics Letters

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Pereira, S.

PY - 2002/8/12

Y1 - 2002/8/12

KW - semiconductor quantum wells

KW - homogeneous InGaN epilayers

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U2 - 10.1063/1.1498003

DO - 10.1063/1.1498003

M3 - Comment/debate

VL - 81

SP - 1353

EP - 1354

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -